scholarly journals Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures

2010 ◽  
Vol 108 (10) ◽  
pp. 104107 ◽  
Author(s):  
David Mouneyrac ◽  
John G. Hartnett ◽  
Jean-Michel Le Floch ◽  
Michael E. Tobar ◽  
Dominique Cros ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Illumination ◽  
Cryogenic Temperatures ◽  
Free Carriers ◽  
Pure Single Crystal

scholarly journals Photoacoustic properties of single crystal PbTe(Ni)

2007 ◽  
Vol 39 (2) ◽  
pp. 161-167 ◽  
Author(s):  
D. Lukovic ◽  
P.M. Nikolic ◽  
S. Vujatovic ◽  
S. Savic ◽  
D. Urosevic
Keyword(s):  
Thermal Diffusivity ◽  
Sodium Chloride ◽  
Single Crystal ◽  
Transport Parameters ◽  
Cubic Lattice ◽  
Free Carriers ◽  
Thermal Difusivity ◽  
Bridgeman Method ◽  
Set Up ◽  
Pure Single Crystal

Single crystals of PbTe(Ni) were investigated by the photoacoustic method. They were produced using the Bridgeman method. These crystals have a sodium chloride cubic lattice and could be cleaved paralel to the plane orientation (200). They were of the n-type. Phase and amplitude photoacoustic spectra were measured using a transmision detection configuration set-up. Photoacoustic (PA) spectra (single and normalized) were numerically analyzed using the Rosencwaig-Gersho model. Thermal diffusivity and some electron-transport parameters were determined. These results were compared with existing results for pure single crystal PbTe. Thermal difusivity of PbTe(Ni) is a bit higher than the thermal difusivity of pure PbTe. This is the consequence of a decreasing concentration of the majority free carriers in the doped alloy. .

Photon induced far-infrared absorption in pure single crystal silicon

1999 ◽  
Vol 40 (6) ◽  
pp. 447-451 ◽  
Author(s):  
Christoph R Englert ◽  
Hansjörg Maurer ◽  
Manfred Birk
Keyword(s):  
Single Crystal ◽  
Infrared Absorption ◽  
Single Crystal Silicon ◽  
Far Infrared ◽  
Crystal Silicon ◽  
Pure Single Crystal

Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing

2015 ◽  
Vol 26 (16) ◽  
pp. 165301 ◽  
Author(s):  
Ting-Wei Liao ◽  
Hung-Ming Chen ◽  
Kuan-Yuan Shen ◽  
Chieh-Hsiung Kuan
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Sandwich Structure ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pure Single Crystal

Zn doped MAPbBr3 single crystal with advanced structural and optical stability achieved by strain compensation

Nanoscale ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 3692-3700 ◽  
Author(s):  
Ruxue Li ◽  
Shaoqing Chen ◽  
Xia Li ◽  
Guoxin Yin ◽  
Youpin Gong ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Illumination ◽  
Optical Stability ◽  
Strain Compensation

Strain compensation in a Zn doped MAPbBr3 single crystal under light illumination gives rise to improved photostability in terms of temperature and time to the benefit of photodetector.

On the dynamically stored energy of cold work in pure single crystal and polycrystalline copper

2012 ◽  
Vol 60 (9) ◽  
pp. 3719-3728 ◽  
Author(s):  
D. Rittel ◽  
A.A. Kidane ◽  
M. Alkhader ◽  
A. Venkert ◽  
P. Landau ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cold Work ◽  
Polycrystalline Copper ◽  
Stored Energy ◽  
Pure Single Crystal

Specific heat of pure single-crystal and polycrystalline copper below 3 °K

1969 ◽  
Vol 47 (12) ◽  
pp. 1253-1255 ◽  
Author(s):  
Douglas L. Martin
Keyword(s):  
Single Crystal ◽  
Specific Heat ◽  
Polycrystalline Copper ◽  
Specific Heats ◽  
Pure Single Crystal

Within the error limits of the measurement there is no difference between the specific heats of pure single-crystal and pure polycrystalline copper below 3 °K. It is suggested that previous observation of such a difference was because the single crystal had not been degassed before measurement.

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