The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

2010 ◽  
Vol 97 (18) ◽  
pp. 183503 ◽  
Author(s):  
Jang-Yeon Kwon ◽  
Ji Sim Jung ◽  
Kyoung Seok Son ◽  
Kwang-Hee Lee ◽  
Joon Seok Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Bias Instability ◽  
The Impact

scholarly journals Growth, characterization, and thin film transistor application of CH3NH3PbI3 perovskite on polymeric gate dielectric layers

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Polymeric Surfaces ◽  
Dielectric Layers ◽  
Growth Characterization ◽  
Micron Size

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.

scholarly journals Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1058
Author(s):  
Yang-Yen Yu ◽  
Cheng-Huai Yang
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Inorganic Nanoparticles ◽  
Semiconductor Layer ◽  
Organic Thin Film ◽  
Switching Current ◽  
High Dielectric

High-transparency soluble polyimide with COOH and fluorine functional groups and TiO2-SiO2 composite inorganic nanoparticles with high dielectric constants were synthesized in this study. The polyimide and inorganic composite nanoparticles were further applied in the preparation of organic-inorganic hybrid high dielectric materials as the gate dielectric for a stretchable transistor. The optimal ratio of organic and inorganic components in the hybrid films was investigated. In addition, Jeffamine D2000 and polyurethane were added to the gate dielectric to improve the tensile properties of the organic thin film transistor (OTFT) device. PffBT4T-2OD was used as the semiconductor layer material and indium gallium liquid alloy as the upper electrode. Electrical property analysis demonstrated that the mobility could reach 0.242 cm2·V−1·s−1 at an inorganic content of 30 wt.%, and the switching current ratio was 9.04 × 103. After Jeffamine D2000 and polyurethane additives were added, the mobility and switching current could be increased to 0.817 cm2·V−1·s−1 and 4.27 × 105 for Jeffamine D2000 and 0.562 cm2·V−1·s−1 and 2.04 × 105 for polyurethane, respectively. Additives also improved the respective mechanical properties. The stretching test indicated that the addition of polyurethane allowed the OTFT device to be stretched to 50%, and the electrical properties could be maintained after stretching 150 cycles.

Bio Organic-Based Gate Dielectric Materials for Thin Film Transistors

2012 ◽  
Vol 1467 ◽  
Author(s):  
James G. Grote ◽  
Fahima Ouchen ◽  
Donna M. Joyce ◽  
Kristi M. Singh ◽  
Narayanan Venkat ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
Variable Temperature ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Large Temperature ◽  
Hybrid Films ◽  
Dielectric Characterization ◽  
High Dielectric

ABSTRACTThe potential of bio-dielectrics for thin film transistor applications was explored via the incorporation of titanium dioxide (TiO2) nanoparticles, rutile form, a high dielectric constant (ε) ceramic, in the deoxyribonucleic acid (DNA) bio-polymer. The DNA-ceramic hybrid films were fabricated from stable suspensions of the TiO2 nanoparticles in viscous, aqueous DNA solutions. Dielectric characterization revealed that the incorporation of TiO2 in DNA resulted in enhanced dielectric constant (14.3 at 1 kHz for 40 wt % TiO2) relative to that of DNA in the entire frequency range of 1 kHz-1 MHz. Variable temperature dielectric measurements, in the 20-80°C range, of the DNA-TiO2 films revealed that the ceramic additive stabilizes DNA against large temperature dependent variations in both ε and the dielectric loss factor tan δ. The bulk resistivity of the DNA-TiO2 hybrid films was measured to be two to three orders of magnitude higher than that of the control DNA films, indicating their potential for utilization as insulating dielectrics in transistor and capacitor applications.

Poly(vinyl acetate)/Clay Nanocomposite Materials for Organic Thin Film Transistor Application

2008 ◽  
Vol 8 (5) ◽  
pp. 2676-2679 ◽  
Author(s):  
B. J. Park ◽  
J. H. Sung ◽  
J. H. Park ◽  
J. S. Choi ◽  
H. J. Choi
Keyword(s):  
Thin Film ◽  
Vinyl Acetate ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Fracture Morphology ◽  
Dielectric Materials ◽  
Nanocomposite Materials ◽  
Clay Nanocomposites ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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