Deep electronic levels at growth interrupted interfaces in low‐temperature‐grown GaAs and the pressure dependence of these levels
Keyword(s):
2001 ◽
Vol 289
(1-2)
◽
pp. 93-98
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2015 ◽
Vol 212
(9)
◽
pp. 2080-2084
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Keyword(s):
2010 ◽
Vol 405
(19)
◽
pp. 4133-4138
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2000 ◽
Vol 17
(6)
◽
pp. 1077
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