Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy

1996 ◽  
Vol 69 (23) ◽  
pp. 3551-3553 ◽  
Author(s):  
T.‐B. Ng ◽  
D. B. Janes ◽  
D. McInturff ◽  
J. M. Woodall
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Gaas Surface ◽  
Surface Layers ◽  
Inhibited Oxidation ◽  
Low Temperature Grown Gaas

Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers

2003 ◽  
Vol 94 (5) ◽  
pp. 3651-3653 ◽  
Author(s):  
Kai Liu ◽  
Arunas Krotkus ◽  
K. Bertulis ◽  
Jingzhou Xu ◽  
X.-C. Zhang
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Gaas Surface ◽  
Surface Layers ◽  
Low Temperature Grown Gaas

Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs

1996 ◽  
Vol 448 ◽  
Author(s):  
D.B. Janes ◽  
S. Hong ◽  
V. R. Kolagunta ◽  
D. McInturff ◽  
T.-B. NG ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Field Effect Transistors ◽  
Layer Structure ◽  
Gaas Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Semiconductor Surface ◽  
Low Resistance ◽  
Low Temperature Grown Gaas

AbstractThe chemical stability of a GaAs layer structure consisting of a thin (10 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, is described. Scanning tunneling spectroscopy and X-ray photoelectron spectroscopy performed after atmospheric exposure indicate that the LTG:GaAs surface layer oxidizes much less rapidly than comparable layers of stoichiometric GaAs. There is also evidence that the terminal oxide thickness is smaller than that of stoichiometric GaAs. The spectroscopy results are used to confirm a model for conduction in low resistance, nonalloyed contacts employing comparable layer structures. The inhibited surface oxidation rate is attributed to the bulk Fermi level pinning and the low minority carrier lifetime in unannealed LTG:GaAs. Device applications including low-resistance cap layers for field-effect transistors are described.

Arsenic precipitation from thin surface layers of low‐temperature grown GaAs

1996 ◽  
Vol 69 (10) ◽  
pp. 1441-1443 ◽  
Author(s):  
R. A. Kiehl ◽  
M. Yamaguchi ◽  
T. Ohshima ◽  
M. Saito ◽  
N. Yokoyama
Keyword(s):  
Low Temperature ◽  
Surface Layers ◽  
Low Temperature Grown Gaas

Stability of a low‐temperature grown GaAs surface layer following air exposure using tunneling microscopy

1996 ◽  
Vol 68 (16) ◽  
pp. 2258-2260 ◽  
Author(s):  
S. Hong ◽  
R. Reifenberger ◽  
D. B. Janes ◽  
D. McInturff ◽  
J. M. Woodall
Keyword(s):  
Surface Layer ◽  
Low Temperature ◽  
Gaas Surface ◽  
Tunneling Microscopy ◽  
Air Exposure ◽  
Low Temperature Grown Gaas

scholarly journals Elucidation of the Crystal Growth Characteristics of SnO2 Nanoaggregates Formed by Sequential Low-Temperature Sol-Gel Reaction and Freeze Drying

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1738
Author(s):  
Saeid Vafaei ◽  
Alexander Wolosz ◽  
Catlin Ethridge ◽  
Udo Schnupf ◽  
Nagisa Hattori ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Freeze Drying ◽  
Sno2 Nanoparticles ◽  
Sol Gel ◽  
Functional Materials ◽  
Cost Effective ◽  
High Concentration

SnO2 nanoparticles are regarded as attractive, functional materials because of their versatile applications. SnO2 nanoaggregates with single-nanometer-scale lumpy surfaces provide opportunities to enhance hetero-material interfacial areas, leading to the performance improvement of materials and devices. For the first time, we demonstrate that SnO2 nanoaggregates with oxygen vacancies can be produced by a simple, low-temperature sol-gel approach combined with freeze-drying. We characterize the initiation of the low-temperature crystal growth of the obtained SnO2 nanoaggregates using high-resolution transmission electron microscopy (HRTEM). The results indicate that Sn (II) hydroxide precursors are converted into submicrometer-scale nanoaggregates consisting of uniform SnO2 spherical nanocrystals (2~5 nm in size). As the sol-gel reaction time increases, further crystallization is observed through the neighboring particles in a confined part of the aggregates, while the specific surface areas of the SnO2 samples increase concomitantly. In addition, X-ray photoelectron spectroscopy (XPS) measurements suggest that Sn (II) ions exist in the SnO2 samples when the reactions are stopped after a short time or when a relatively high concentration of Sn (II) is involved in the corresponding sol-gel reactions. Understanding this low-temperature growth of 3D SnO2 will provide new avenues for developing and producing high-performance, photofunctional nanomaterials via a cost-effective and scalable method.

Ultrafast photoconductors from low-temperature-grown GaAs for terahertz components activated by femtosecond 1-μm wavelength laser pulses

2012 ◽  
Vol 9 (7) ◽  
pp. 1693-1695
Author(s):  
Juozas Adamonis ◽  
Klemensas Bertulis ◽  
Andrius Bičiūnas ◽  
Ramūnas Adomavičius ◽  
Arūnas Krotkus
Keyword(s):  
Low Temperature ◽  
Laser Pulses ◽  
Low Temperature Grown Gaas

Interaction of localized spins in low-temperature-grown GaAs layers

2010 ◽  
Vol 405 (19) ◽  
pp. 4133-4138 ◽  
Author(s):  
D.W. Jung ◽  
J.P. Noh ◽  
N. Otsuka
Keyword(s):  
Low Temperature ◽  
Low Temperature Grown Gaas
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