Physical mechanisms for picosecond laser ablation of silicon carbide at infrared and ultraviolet wavelengths

2010 ◽  
Vol 97 (18) ◽  
pp. 181918 ◽  
Author(s):  
Sha Tao ◽  
Ronald L. Jacobsen ◽  
Benxin Wu
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Picosecond Laser ◽  
Physical Mechanisms

scholarly journals Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

2020 ◽  
Vol 22 (4) ◽  
pp. 1901173
Author(s):  
Tuan‐Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Karen M. Dowling ◽  
Ananth Saran Yalamarthy ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Uv Laser

Physical mechanisms of SiNx layer structuring with ultrafast lasers by direct and confined laser ablation

2015 ◽  
Vol 117 (10) ◽  
pp. 105304 ◽  
Author(s):  
S. Rapp ◽  
G. Heinrich ◽  
M. Wollgarten ◽  
H. P. Huber ◽  
M. Schmidt
Keyword(s):  
Laser Ablation ◽  
Ultrafast Lasers ◽  
Physical Mechanisms ◽  
Sinx Layer

scholarly journals Studies on linear, nonlinear optical and excited state dynamics of silicon nanoparticles prepared by picosecond laser ablation

AIP Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 127127 ◽  
Author(s):  
Syed Hamad ◽  
G. Krishna Podagatlapalli ◽  
R. Mounika ◽  
S. V. S. Nageswara Rao ◽  
A. P. Pathak ◽  
...  
Keyword(s):  
Excited State ◽  
Laser Ablation ◽  
Nonlinear Optical ◽  
Silicon Nanoparticles ◽  
Picosecond Laser ◽  
Excited State Dynamics

Modeling of excimer laser ablation of silicon carbide

2021 ◽  
Vol 104 (11) ◽  
Author(s):  
Chen Lu ◽  
Meng-meng Gao ◽  
Ting-ting Hu ◽  
Zhi-zhan Chen
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Raman microscopy study of pulsed laser ablation deposited silicon carbide films

1998 ◽  
Vol 332 (1-2) ◽  
pp. 290-294 ◽  
Author(s):  
Fortunato Neri ◽  
Sebastiano Trusso ◽  
Cirino Vasi ◽  
Francesco Barreca ◽  
Paolo Valisa
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Microscopy Study ◽  
Raman Microscopy

Characterization of Enamel and Dentin Response to Nd:YAG Picosecond Laser Ablation

1999 ◽  
Vol 17 (3) ◽  
pp. 127-131 ◽  
Author(s):  
R.F.Z. LIZARELLI ◽  
C. KURACHI ◽  
L. MISOGUTI ◽  
V.S. BAGNATO
Keyword(s):  
Laser Ablation ◽  
Picosecond Laser
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