Band structure of InAsSb strained‐layer superlattices

1992 ◽  
Vol 71 (4) ◽  
pp. 1842-1845 ◽  
Author(s):  
Lifeng Liu ◽  
G. S. Lee ◽  
A. H. Marshak
Keyword(s):  
Band Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Rapid Thermal Processing for Strained-Layer Semiconductor Devices

1993 ◽  
Vol 303 ◽  
Author(s):  
John C. Zolper ◽  
David R. Myers
Keyword(s):  
Band Structure ◽  
Semiconductor Lasers ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Strained Layer ◽  
Layer Structures ◽  
Thermodynamic Limits ◽  
The Stability ◽  
Mismatched Heteroepitaxy ◽  
Strained Layer Superlattices

ABSTRACTStrained-layer semiconductors have revolutionized modern heterostructure devices by exploiting the modification of semiconductor band structure associated with the coherent strain of lattice-mismatched heteroepitaxy. The modified band structure improves transport of holes in heterostructures and enhances the operation of semiconductor lasers. Strainedlayer epitaxy also can create materials whose band gaps match wavelengths (e. g. 1.06 μm and 1.32 μm) not attainable in ternary epitaxial systems lattice matched to binary substrates. Other benefits arise from metallurgical effects of modulated strain fields on dislocations.Lattice mismatched epitaxial layers that exceed the limits of equilibrium thermodynamics will degrade under sufficient thermal processing by converting the as-grown coherent epitaxy into a network of strain-relieving dislocations. After presenting the effects of strain on band structure, we describe the stability criterion for rapid-thermal processing of strained-layer structures and the effects of exceeding the thermodynamic limits. Finally, device results are reviewed for structures that benefit from high temperature processing of strained-layer superlattices.

Rapid Thermal Processing for Strained-Layer Semiconductor Devices

1993 ◽  
Vol 300 ◽  
Author(s):  
John C. Zolper ◽  
David R. Myers
Keyword(s):  
Band Structure ◽  
Semiconductor Lasers ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Strained Layer ◽  
Layer Structures ◽  
Thermodynamic Limits ◽  
The Stability ◽  
Mismatched Heteroepitaxy ◽  
Strained Layer Superlattices

ABSTRACTStrained-layer semiconductors have revolutionized modern heterostructure devices by exploiting the modification of semiconductor band structure associated with the coherent strain of lattice-mismatched heteroepitaxy. The modified band structure improves transport of holes in heterostructures and enhances the operation of semiconductor lasers. Strainedlayer epitaxy also can create materials whose band gaps match wavelengths (e. g. 1.06 μm and 1.32 μm) not attainable in ternary epitaxial systems lattice matched to binary substrates. Other benefits arise from metallurgical effects of modulated strain fields on dislocations.Lattice mismatched epitaxial layers that exceed the limits of equilibrium thermodynamics will degrade under sufficient thermal processing by converting the as-grown coherent epitaxy into a network of strain-relieving dislocations. After presenting the effects of strain on band structure, we describe the stability criterion for rapid-thermal processing of strained-layer structures and the effects of exceeding the thermodynamic limits. Finally, device results are reviewed for structures that benefit from high temperature processing of strained-layer superlattices.

Photoluminescence and the band structure of InAsSb strained‐layer superlattices

1988 ◽  
Vol 53 (3) ◽  
pp. 216-218 ◽  
Author(s):  
S. R. Kurtz ◽  
G. C. Osbourn ◽  
R. M. Biefeld ◽  
S. R. Lee
Keyword(s):  
Band Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

Effects of electric field on ZnSe/ZnS strained-layer superlattices

1990 ◽  
Vol 101 (1-4) ◽  
pp. 550-553 ◽  
Author(s):  
Toshiya Yokogawa ◽  
Tohru Saitoh ◽  
Tadashi Narusawa
Keyword(s):  
Electric Field ◽  
Strained Layer ◽  
Strained Layer Superlattices
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