Effects of substrate temperature on growth orientation and superconducting properties of YBa2Cu3O7−xfilms prepared by metalorganic chemical vapor deposition

1992 ◽  
Vol 71 (5) ◽  
pp. 2472-2474 ◽  
Author(s):  
Y. Q. Li ◽  
J. Zhao ◽  
C. S. Chern ◽  
B. Gallois ◽  
P. Norris ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Superconducting Properties ◽  
Growth Orientation ◽  
Metalorganic Chemical

Preparation and Characterization of Pb(Zr, Ti)O3 Thin Films by Metalorganic Chemical vapor Deposition Using a Solid Delivery System

2000 ◽  
Vol 15 (6) ◽  
pp. 1284-1290 ◽  
Author(s):  
Eunki Hong ◽  
Ju Cheol Shin ◽  
Jaeho Choi ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Delivery System ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Pzt Thin Films ◽  
Reactor Pressure ◽  
Metalorganic Chemical

Pb(Zr, Ti)O3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition using solid delivery system. The effects of deposition parameters such as the substrate temperature, the concentration of Pb precursor in the precursor mixtures, and the reactor pressure on the structural and electrical properties of PZT thin films were investigated. To obtain single-phase PZT thin films, the optimal range of the substrate temperature should be between 600 and 650 °C. The PbO content in PZT thin films was proportional to the fraction of Pb in the precursor mixture below 550 °C, but it was independent of the fraction of Pb in the mixture above 600 °C. With the increment of the reactor pressure, Zr contents in PZT thin films were increased, and the Pb/(Zr + Ti) ratio became more stoichiometric so that the ferroelectric properties were improved.

Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

1997 ◽  
Vol 70 (14) ◽  
pp. 1822-1824 ◽  
Author(s):  
Q. J. Hartmann ◽  
N. F. Gardner ◽  
T. U. Horton ◽  
A. P. Curtis ◽  
D. A. Ahmari ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Preparation of zirconia thin films by metalorganic chemical vapor deposition using ultrasonic nebulization

1996 ◽  
Vol 11 (10) ◽  
pp. 2583-2587 ◽  
Author(s):  
Dong-Young Kim ◽  
Choon-Ho Lee ◽  
Soon Ja Park
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Ultrasonic Nebulization ◽  
Zirconia Film ◽  
Metalorganic Chemical

Zirconia (ZrO2) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) using ultrasonic nebulization with new source materials, Zr(OBu)4, Zr(OBu)3(acac), Zr(OBu)2(acac)2, and Zr(OBu) (acac)3. This process is a simple and economic method to prepare oxide thin films. Zr(OBu)4 was successfully reacted with acetylacetone at a molar ratio of 1: 3. Polycrystalline thin films were deposited at a substrate temperature range from 300 to 550 °C. The substitution of alkoxy radicals by acetylacetone made the deposition rate higher and insensitive to substrate temperature. The films deposited below 450 °C mostly had a monoclinic structure, and those deposited above 450 °C had a tetragonal structure. The measured optical energy band gap of zirconia film was 5.32 eV.

Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum

1999 ◽  
Vol 14 (5) ◽  
pp. 1982-1989 ◽  
Author(s):  
R. Jonnalagadda ◽  
D. Yang ◽  
B. R. Rogers ◽  
J. T. Hillman ◽  
R. F. Foster ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Texture Surface ◽  
Short Time ◽  
Metalorganic Chemical

We discuss substrate temperature ramping effects during chemical vapor deposition of aluminum on nucleation density, texture, surface roughness, and resistivity of the resulting films. Results from three different process protocols are presented. Ramping the temperature down during the deposition from 673 K resulted in a larger fraction of small nuclei compared to deposition at a constant temperature of 573 K. From among the protocols studied, the lowest surface roughness was obtained by initially depositing for a short time while ramping the temperature down from 673 K, followed by deposition at 573 K, compared to all the other films. The same process protocol resulted in the highest Al(111) texturing, highest reflectivity, and lowest resistivity.

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

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