Growth and characterization of substrate‐quality ZnSe single crystals using seeded physical vapor transport

1992 ◽  
Vol 71 (6) ◽  
pp. 2931-2936 ◽  
Author(s):  
Gene Cantwell ◽  
W. C. Harsch ◽  
H. L. Cotal ◽  
B. G. Markey ◽  
S. W. S. McKeever ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Substrate Quality

Morphological characterization of pentacene single crystals grown by physical vapor transport

2007 ◽  
Vol 253 (7) ◽  
pp. 3581-3585 ◽  
Author(s):  
Xionghui Zeng ◽  
Yong Qiu ◽  
Juan Qiao ◽  
Guifang Dong ◽  
Liduo Wang
Keyword(s):  
Single Crystals ◽  
Morphological Characterization ◽  
Vapor Transport ◽  
Physical Vapor Transport

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport

1993 ◽  
pp. 103-108
Author(s):  
H.L. Cotal ◽  
B.G. Markey ◽  
S.W.S. Mckeever ◽  
Gene Cantwell ◽  
W.C. Harsch
Keyword(s):  
Single Crystal ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Substrate Quality

Electrical characterization of 6H-SiC grown by physical vapor transport method

2009 ◽  
Vol 165 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
G. Zaremba ◽  
M. Kaniewska ◽  
W. Jung ◽  
M. Guziewicz ◽  
K. Grasza
Keyword(s):  
Electrical Characterization ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Sign in / Sign up

Export Citation Format

Share Document