Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  

2009 ◽  
Vol 48 (11) ◽  
pp. 118003 ◽  
Author(s):  
Sawako Miyamoto ◽  
Toshihiro Shimada ◽  
Manabu Ohtomo ◽  
Akira Chikamatsu ◽  
Tetsuya Hasegawa

1994 ◽  
Vol 137 (1-2) ◽  
pp. 150-154 ◽  
Author(s):  
R. Helbing ◽  
R.S. Feigelson

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.


2007 ◽  
Vol 253 (7) ◽  
pp. 3581-3585 ◽  
Author(s):  
Xionghui Zeng ◽  
Yong Qiu ◽  
Juan Qiao ◽  
Guifang Dong ◽  
Liduo Wang

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