High quality In0.15Ga0.85As/AlxGa1−xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy

1992 ◽  
Vol 71 (7) ◽  
pp. 3249-3255 ◽  
Author(s):  
Luc Buydens ◽  
Piet Demeester ◽  
ZongQiang Yu ◽  
Peter Van Daele
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

2011 ◽  
Vol 99 (7) ◽  
pp. 072116 ◽  
Author(s):  
D. Fekete ◽  
R. Carron ◽  
P. Gallo ◽  
B. Dwir ◽  
A. Rudra ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

1997 ◽  
Vol 28 (8-10) ◽  
pp. 727-734 ◽  
Author(s):  
E. Mayo ◽  
S.A. Dickey ◽  
A. Majerfeld ◽  
A. Sanz-Hervás ◽  
B.W. Kim
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L143-L145 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
Shigeo Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
In Doping

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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