Low threshold current and high differential gain in ideal tensile‐ and compressive‐strained quantum‐well lasers

1992 ◽  
Vol 71 (9) ◽  
pp. 4626-4628 ◽  
Author(s):  
A. Ghiti ◽  
M. Silver ◽  
E. P. O’Reilly
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Differential Gain ◽  
Low Threshold ◽  
Strained Quantum Well

Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

1992 ◽  
Vol 4 (11) ◽  
pp. 1189-1191 ◽  
Author(s):  
P.L. Derry ◽  
H.E. Hager ◽  
K.C. Chiu ◽  
D.J. Booher ◽  
E.C. Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Strained Quantum Well ◽  
High Temperature Operation

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

1988 ◽  
Vol 53 (15) ◽  
pp. 1378-1380 ◽  
Author(s):  
I. Suemune ◽  
L. A. Coldren ◽  
M. Yamanishi ◽  
Y. Kan
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Modulation Bandwidth ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Strained Quantum Well

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

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