Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

2010 ◽  
Vol 97 (17) ◽  
pp. 173107 ◽  
Author(s):  
T. V. Hakkarainen ◽  
J. Tommila ◽  
A. Schramm ◽  
A. Tukiainen ◽  
R. Ahorinta ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Nanoimprint Lithography ◽  
Structural And Optical Properties ◽  
Inas Quantum Dot

Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Ultrananocrystalline Diamond ◽  
Gaas Quantum Dot

scholarly journals Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys

2001 ◽  
Vol 692 ◽  
Author(s):  
A. M. Mintairov ◽  
P. A. Blagnov ◽  
T. Kosel ◽  
J. L. Merz ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Near Field ◽  
Zeeman Splitting ◽  
Localized States ◽  
Emission Lines ◽  
Structural And Optical Properties ◽  
Dramatic Difference ◽  
Nitrogen Excess ◽  
Narrow Emission

AbstractWe used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

2009 ◽  
Vol 55 (1) ◽  
pp. 24-27 ◽  
Author(s):  
SoonIl Jung ◽  
Ilgu Yun ◽  
JooIn Lee ◽  
IlKi Han
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Superluminescent Diodes ◽  
Self Assembled ◽  
Inas Quantum Dot

scholarly journals Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

2003 ◽  
Vol 83 (22) ◽  
pp. 4524-4526 ◽  
Author(s):  
X. Q. Zhang ◽  
S. Ganapathy ◽  
I. Suemune ◽  
H. Kumano ◽  
K. Uesugi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Strain Compensation ◽  
Inas Quantum Dot
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