Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

2009 ◽  
Vol 55 (1) ◽  
pp. 24-27 ◽  
Author(s):  
SoonIl Jung ◽  
Ilgu Yun ◽  
JooIn Lee ◽  
IlKi Han
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Superluminescent Diodes ◽  
Self Assembled ◽  
Inas Quantum Dot

Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

2002 ◽  
Vol 737 ◽  
Author(s):  
Z. Y. Zhang ◽  
Ch. M. Li ◽  
P. Jin ◽  
X. Q. Meng ◽  
B. Xu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Active Region ◽  
Quantum Dot ◽  
Room Temperature ◽  
Spectral Width ◽  
Promising Candidate ◽  
Multiple Layer ◽  
Superluminescent Diodes ◽  
Pl Intensity ◽  
Inas Quantum Dot

ABSTRACTWe have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

scholarly journals Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

2007 ◽  
Vol 2 (2) ◽  
pp. 112-117 ◽  
Author(s):  
N. W. Strom ◽  
Zh. M. Wang ◽  
J. H. Lee ◽  
Z. Y. AbuWaar ◽  
Yu. I. Mazur ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Assembled ◽  
Inas Quantum Dot

TEM Imaging for Compositional Analysis of Self-Assembled InAs Quantum Dot Structures

2004 ◽  
Vol 10 (S02) ◽  
pp. 532-533 ◽  
Author(s):  
Gabriel Agnello ◽  
Vadim Tokranov ◽  
Matthew Lamberti ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dot ◽  
Compositional Analysis ◽  
Self Assembled ◽  
Inas Quantum Dot

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Observation of resonant tunneling through a self-assembled InAs quantum dot layer

2006 ◽  
Vol 88 (4) ◽  
pp. 043103 ◽  
Author(s):  
B. Aslan ◽  
H. C. Liu ◽  
J. A. Gupta ◽  
Z. R. Wasilewski ◽  
G. C. Aers ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resonant Tunneling ◽  
Self Assembled ◽  
Inas Quantum Dot

Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure

2006 ◽  
Vol 100 (4) ◽  
pp. 043703 ◽  
Author(s):  
S. W. Lin ◽  
A. M. Song ◽  
N. Rigopolis ◽  
B. Hamilton ◽  
A. R. Peaker ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Deep Levels ◽  
Electrical Studies ◽  
Self Assembled ◽  
Inas Quantum Dot
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