Characterization of the interaction between a hollow cathode source and an ambient plasma

1992 ◽  
Vol 71 (10) ◽  
pp. 4709-4717 ◽  
Author(s):  
G. Vannaroni ◽  
M. Dobrowolny ◽  
E. Melchioni ◽  
F. De Venuto ◽  
R. Giovi
Keyword(s):  
Hollow Cathode ◽  
Ambient Plasma

Characterization of hollow cathode vacuum arc with axial magnetic field as a concentrated heat source

Vacuum ◽  
2019 ◽  
Vol 160 ◽  
pp. 70-74 ◽  
Author(s):  
Jianping Xu ◽  
Xiubo Tian ◽  
Haiqun Qi ◽  
Jiajie Wang ◽  
Chunzhi Gong ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Heat Source ◽  
Hollow Cathode ◽  
Axial Magnetic Field ◽  
Vacuum Arc

Characterization of Hollow Cathode Performance and Thermal Behavior

2006 ◽  
Author(s):  
James Polk ◽  
Dan Goebel ◽  
Ron Watkins ◽  
Kristina Jameson ◽  
Lance Yoneshige
Keyword(s):  
Thermal Behavior ◽  
Hollow Cathode

Characterization of the Remote Plasma Generated in a Pulsed-DC Gas-Flow Hollow-Cathode Discharge

2007 ◽  
Vol 35 (3) ◽  
pp. 527-533 ◽  
Author(s):  
Cristian Paduraru ◽  
Kurt H. Becker ◽  
Abe Belkind ◽  
Jose L. Lopez ◽  
Y. Aranda Gonzalvo
Keyword(s):  
Hollow Cathode ◽  
Gas Flow ◽  
Hollow Cathode Discharge ◽  
Remote Plasma ◽  
Pulsed Dc

Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

2004 ◽  
Vol 808 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Scott A. Darveau ◽  
Christopher L. Exstrom
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Cathode Plasma ◽  
Glass Substrates ◽  
Elemental Analyses ◽  
Silicon And Germanium ◽  
Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

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