Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method
Keyword(s):
1989 ◽
Vol 36
(11)
◽
pp. 2386-2393
◽
1990 ◽
Vol 37
(9)
◽
pp. 2105-2107
◽
1998 ◽
Vol 37
(Part 1, No. 6A)
◽
pp. 3284-3285
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):