Use of MeV O+ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

1992 ◽  
Vol 71 (10) ◽  
pp. 4949-4954 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
J. R. Lothian ◽  
T. R. Fullowan ◽  
A. Katz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY

1993 ◽  
Vol 07 (28) ◽  
pp. 4687-4761 ◽  
Author(s):  
S.J. PEARTON
Keyword(s):  
Ion Implantation ◽  
Heterojunction Bipolar Transistors ◽  
Semiconductor Device ◽  
Bipolar Transistors ◽  
Semiconductor Technology ◽  
Selective Area ◽  
Device Structures ◽  
Doping Profiles ◽  
Multi Quantum Well ◽  
Device Technology

A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the use of implantation in a variety of III–V devices.

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