Limitations on models describing the kinetics of light‐induced defect creation in hydrogenated amorphous silicon

1992 ◽  
Vol 71 (10) ◽  
pp. 5246-5247 ◽  
Author(s):  
Richard H. Bube ◽  
David Redfield
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

The Nature and the Kinetics of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon Films and Solar Cells

2014 ◽  
Vol 4 (6) ◽  
pp. 1331-1336 ◽  
Author(s):  
Jimmy Melskens ◽  
Marc Schouten ◽  
Awital Mannheim ◽  
Albert S. Vullers ◽  
Yalda Mohammadian ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Defect Creation ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Light Induced Changes in the Non-Gaussian Noise Statistics in Doped Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Gaussian Noise ◽  
Hydrogenated Amorphous Silicon ◽  
Noise Power ◽  
Defect Creation ◽  
Non Gaussian ◽  
Noise Statistics ◽  
Induced Changes ◽  
Many Body Interactions ◽  
Hydrogenated Amorphous

The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.

Sign in / Sign up

Export Citation Format

Share Document