Radiation‐induced interface‐state generation in reoxidized nitrided SiO2

1992 ◽  
Vol 71 (2) ◽  
pp. 1029-1031 ◽  
Author(s):  
V. Ramgopal Rao ◽  
J. Vasi
Keyword(s):  
Interface State ◽  
State Generation ◽  
Radiation Induced

Radiation-Induced Interface-State Generation in MOS Devices

1986 ◽  
Vol 33 (6) ◽  
pp. 1177-1184 ◽  
Author(s):  
J. R. Schwank ◽  
P. S. Winokur ◽  
F. W. Sexton ◽  
D. M. Fleetwood ◽  
J. H. Perry ◽  
...  
Keyword(s):  
Interface State ◽  
Mos Devices ◽  
State Generation ◽  
Radiation Induced

scholarly journals Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

2021 ◽  
pp. 1-8
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Ben Kaczer ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Interface State ◽  
Hot Carrier ◽  
State Generation ◽  
The Impact

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Analysis of the kinetics for interface state generation following hole injection

2003 ◽  
Vol 93 (10) ◽  
pp. 6107-6116 ◽  
Author(s):  
J. F. Zhang ◽  
C. Z. Zhao ◽  
G. Groeseneken ◽  
R. Degraeve
Keyword(s):  
Interface State ◽  
Hole Injection ◽  
State Generation

Interface state generation due to high-field stressing in MOS oxides

1995 ◽  
Vol 38 (2) ◽  
pp. 477-480 ◽  
Author(s):  
R.M. Patrikar ◽  
R. Lal ◽  
J. Vasi
Keyword(s):  
High Field ◽  
Interface State ◽  
State Generation
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