Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results

1991 ◽  
Vol 70 (1) ◽  
pp. 418-421 ◽  
Author(s):  
K. T. Tsen ◽  
David J. Smith ◽  
S.‐C. Y. Tsen ◽  
Nathan S. Kumar ◽  
H. Morkoc
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
High Resolution Electron Microscopy ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Resolution Electron ◽  
Interface Phonons

Spin-flip Raman scattering by electrons bound to donors in CdTe/Cd1−xMnxTe multiple quantum well structures as a function of barrier composition

1994 ◽  
Vol 138 (1-4) ◽  
pp. 656-660 ◽  
Author(s):  
D. Wolverson ◽  
J.J. Davies ◽  
S.V. Railson ◽  
M.P. Halsall ◽  
D.E. Ashenford ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Spin Flip

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

Sign in / Sign up

Export Citation Format

Share Document