Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics

2010 ◽  
Vol 108 (9) ◽  
pp. 094102 ◽  
Author(s):  
D. Mao ◽  
I. Mejia ◽  
H. Stiegler ◽  
B. E. Gnade ◽  
M. A. Quevedo-Lopez
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Ferroelectric Thin Film ◽  
Polarization Behavior ◽  
Thin Film Capacitors ◽  
Poly Vinylidene Fluoride

Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ06 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
Soon-Won Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Zno Thin Film ◽  
Poly Vinylidene Fluoride

$\hbox{PbZr}_{x}\hbox{Ti}_{1 - x}\hbox{O}_{3}$ Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

2010 ◽  
Vol 31 (9) ◽  
pp. 1017-1019 ◽  
Author(s):  
Jonghyun Rho ◽  
Sang Jin Kim ◽  
Wook Heo ◽  
Nae-Eung Lee ◽  
Hwan-Soo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Film ◽  
Thin Film Capacitors ◽  
Memory Applications

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

2011 ◽  
Vol 1287 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shinhyuk Yang ◽  
Soon-Won Jung ◽  
Sang-Hee Ko Park ◽  
Chun-Won Byun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Plastic Substrate ◽  
Inorganic Hybrid ◽  
Hybrid Type

ABSTRACTAn organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

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