The absorption coefficient of PbSe/CdSe core/shell colloidal quantum dots

2010 ◽  
Vol 97 (16) ◽  
pp. 161908 ◽  
Author(s):  
Bram De Geyter ◽  
Zeger Hens
Keyword(s):  
Quantum Dots ◽  
Absorption Coefficient ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Cdse Core

IR-active vibrational modes of CdTe and CdSe colloidal quantum dots and CdTe/CdSe core/shell nanoparticles and coupling effects

2007 ◽  
Vol 49 (3) ◽  
pp. 547-551 ◽  
Author(s):  
R. B. Vasiliev ◽  
V. S. Vinogradov ◽  
S. G. Dorofeev ◽  
S. P. Kozyrev ◽  
I. V. Kucherenko ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Vibrational Modes ◽  
Coupling Effects ◽  
Cdse Core ◽  
Shell Nanoparticles ◽  
Core Shell Nanoparticles

Surface Organic Ligands-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetime

2021 ◽  
Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Ligands ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Light Emitting ◽  
Long Lifetime

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...

Strain effect on the intraband absorption coefficient for spherical CdSe/CdS/ZnSe core–shell–shell quantum dots

2022 ◽  
Vol 141 ◽  
pp. 106400
Author(s):  
K.A. Rodríguez-Magdaleno ◽  
R. Pérez-Álvarez ◽  
F. Ungan ◽  
J.C. Martínez-Orozco
Keyword(s):  
Quantum Dots ◽  
Absorption Coefficient ◽  
Strain Effect ◽  
Core Shell ◽  
Intraband Absorption

Resistive Switching in CdTe/CdSe Core–Shell Quantum Dots Embedded Chitosan-Based Memory Devices

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Core Shell ◽  
Cdse Core ◽  
Active Layers ◽  
Ag Electrodes ◽  
Exponential Decrease ◽  
Conductive Bridge ◽  
Bipolar Memory ◽  
State Resistance

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

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