Stress in polyimide films having a rodlike molecular skeleton formed on a silicon substrate

1991 ◽  
Vol 70 (11) ◽  
pp. 7085-7088 ◽  
Author(s):  
Hideshi Nomura ◽  
Masuichi Eguchi ◽  
Masaya Asano
Keyword(s):  
Silicon Substrate ◽  
Polyimide Films ◽  
Molecular Skeleton

Investigation on mechanisms for ion Beam Induced Degradation of Polyimide

1989 ◽  
Vol 157 ◽  
Author(s):  
X.L. Xu ◽  
Zhou Zuyao ◽  
Chen Lizhi ◽  
Zou Shichang
Keyword(s):  
Energy Loss ◽  
Silicon Substrate ◽  
Nuclear Energy ◽  
Ion Beam ◽  
Mass Effect ◽  
Polyimide Film ◽  
Electronic Energy ◽  
Polyimide Films ◽  
Loss Process ◽  
Nucl Instr

ABSTRACTThree types of ions with different atomic masses (B , Ar and As ) were chosen to irradiate polyimide films in similar conditions in order to check mechanisms of the formation of ion beam induced damage in polyimide. A four-point probe technique was used to measure sheet resistivities of implanted films. An ion mass effect on conductivity of ion irradiated polyimide film was discovered. The ion mass effect on ion beam induced change of conductivity and on the energy loss process of the ions in polyimide suggest that the electronic energy loss of incident ions is an important factor for the increase of conductivity of implanted polyimide, and the contributions of recoil ionization are restricted by the grave damages as a result of nuclear energy loss process of ions in targets. Our hypothesis is supported by automatic spreading resistance measurement of B implanted polyimide film coated on silicon substrate. The results of this work have been compared with the hypothesis of degradation through direct knock on of atoms in polyimide, proposed by D.Fink et al [Nucl. Instr. and Meths B32 (1988) 125]

scholarly journals Bending Beam Measurement of Moisture Diffusion in Polyimide Films on Silicon Substrate

1991 ◽  
Vol 23 (9) ◽  
pp. 1123-1133 ◽  
Author(s):  
Jwo-Huei Jou ◽  
Li Hsu ◽  
Peir-Teh Huang ◽  
Rita Huang ◽  
Wen-Ping Shen
Keyword(s):  
Silicon Substrate ◽  
Moisture Diffusion ◽  
Polyimide Films

Electron microscopy and diffraction studies of polyimides

1983 ◽  
Vol 41 ◽  
pp. 28-29
Author(s):  
O.C. de Hodgins ◽  
K. R. Lawless ◽  
R. Anderson
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Structural Features ◽  
Inert Atmosphere ◽  
Polyimide Films ◽  
Resolution Electron ◽  
The Matrix ◽  
High Resolution Electron Microscope ◽  
Diffraction Patterns ◽  
Polymeric Samples

Commercial polyimide films have shown to be homogeneous on a scale of 5 to 200 nm. The observation of Skybond (SKB) 705 and PI5878 was carried out by using a Philips 400, 120 KeV STEM. The objective was to elucidate the structural features of the polymeric samples. The specimens were spun and cured at stepped temperatures in an inert atmosphere and cooled slowly for eight hours. TEM micrographs showed heterogeneities (or nodular structures) generally on a scale of 100 nm for PI5878 and approximately 40 nm for SKB 705, present in large volume fractions of both specimens. See Figures 1 and 2. It is possible that the nodulus observed may be associated with surface effects and the structure of the polymers be regarded as random amorphous arrays. Diffraction patterns of the matrix and the nodular areas showed different amorphous ring patterns in both materials. The specimens were viewed in both bright and dark fields using a high resolution electron microscope which provided magnifications of 100,000X or more on the photographic plates if desired.

Practical Picture Processing

1974 ◽  
Vol 32 ◽  
pp. 338-339
Author(s):  
T. A. Welton
Keyword(s):  
Radiation Damage ◽  
Coherence Length ◽  
Spatial Information ◽  
State Of The Art ◽  
Coherent Radiation ◽  
The State ◽  
Energy Spread ◽  
Electron Micrograph ◽  
Picture Processing ◽  
Molecular Skeleton

Various authors have emphasized the spatial information resident in an electron micrograph taken with adequately coherent radiation. In view of the completion of at least one such instrument, this opportunity is taken to summarize the state of the art of processing such micrographs. We use the usual symbols for the aberration coefficients, and supplement these with £ and 6 for the transverse coherence length and the fractional energy spread respectively. He also assume a weak, biologically interesting sample, with principal interest lying in the molecular skeleton remaining after obvious hydrogen loss and other radiation damage has occurred.

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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