Formation of interface traps in metal‐oxide‐semiconductor devices during isochronal annealing after irradiation at 78 K

1991 ◽  
Vol 70 (12) ◽  
pp. 7434-7442 ◽  
Author(s):  
N. S. Saks ◽  
R. B. Klein ◽  
S. Yoon ◽  
D. L. Griscom
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Isochronal Annealing ◽  
Interface Traps

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

1993 ◽  
Vol 73 (10) ◽  
pp. 5058-5074 ◽  
Author(s):  
D. M. Fleetwood ◽  
P. S. Winokur ◽  
R. A. Reber ◽  
T. L. Meisenheimer ◽  
J. R. Schwank ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Oxide Traps

scholarly journals A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

2021 ◽  
Vol 129 (5) ◽  
pp. 054501
Author(s):  
Jordan R. Nicholls ◽  
Arnar M. Vidarsson ◽  
Daniel Haasmann ◽  
Einar Ö. Sveinbjörnsson ◽  
Sima Dimitrijev
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps
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