Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structures

1991 ◽  
Vol 70 (3) ◽  
pp. 1144-1156 ◽  
Author(s):  
P. Blood ◽  
A. I. Kucharska ◽  
J. P. Jacobs ◽  
K. Griffiths
Keyword(s):  
Quantum Well ◽  
Optical Gain ◽  
Quantum Well Structures ◽  
Spontaneous Recombination ◽  
Recombination Current

scholarly journals Optimization of Optical Gain in Inx Ga1-xSb/GaSb Unstrained Quantum Well Structures

2015 ◽  
Vol 74 ◽  
pp. 191-197 ◽  
Author(s):  
Said Dehimi ◽  
Aissat Abdelkader ◽  
Djamel Haddad ◽  
Lakhdar Dehimi
Keyword(s):  
Quantum Well ◽  
Optical Gain ◽  
Quantum Well Structures

scholarly journals Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well

1999 ◽  
Vol 4 (S1) ◽  
pp. 642-647
Author(s):  
Michael C.Y. Chan ◽  
Kwok-On Tsang ◽  
E. Herbert Li ◽  
Steven P. Denbaars
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Diffusion Coefficients ◽  
Green Light ◽  
Optical Gain ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Constant Diffusion

Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

2001 ◽  
Vol 79 (10) ◽  
pp. 1477-1479 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Jinn-Kong Sheu ◽  
Gou-Chung Chi ◽  
Ming-Juinn Jou ◽  
...  
Keyword(s):  
Quantum Well ◽  
Crystal Orientation ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Orientation Dependence ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Optical gain in ZnCdSe-ZnSe quantum well structures

1996 ◽  
Author(s):  
Paul C. T. Rees ◽  
Jon. F. Heffernan ◽  
Fred P. Logue ◽  
John F. Donegan ◽  
Christopher Jordan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Gain ◽  
Quantum Well Structures
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