Phase stability and decomposition products of Ti–Al–Ta–N thin films

2010 ◽  
Vol 97 (15) ◽  
pp. 151901 ◽  
Author(s):  
R. Rachbauer ◽  
D. Holec ◽  
P. H. Mayrhofer
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Products

scholarly journals Improving phase stability, hardness, and oxidation resistance of reactively magnetron sputtered (Al,Cr,Nb,ta,Ti)N thin films by Si-alloying

2021 ◽  
pp. 127162
Author(s):  
Andreas Kretschmer ◽  
Alexander Kirnbauer ◽  
Vincent Moraes ◽  
Daniel Primetzhofer ◽  
Kumar Yalamanchili ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxidation Resistance ◽  
Phase Stability

Explosive Thermal Decomposition Mechanism of NTO

1995 ◽  
Vol 418 ◽  
Author(s):  
David J. Beardall ◽  
Tod R. Botcher ◽  
Charles A. Wight
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Condensed Phase ◽  
Decomposition Product ◽  
Rapid Heating ◽  
Initial Step ◽  
Thermal Decomposition Mechanism ◽  
Decomposition Products

AbstractThe initial step of the thermal decomposition of NTO (5-nitro-2,4-dihydro-3H-1,2,4- triazol-3-one) is determined by pulsed infrared laser pyrolysis of thin films. Rapid heating of the film and quenching to 77 K allows one to trap the initial decomposition products in the condensed phase and analyze them using transmission Fourier-transform infrared spectroscopy. The initial decomposition product is CO2; NO2 and HONO are not observed. We propose a new mechanism for NTO decomposition in which CO2 is formed.

scholarly journals Phase stability in Ag-Cu-In-Ga metal precursors for (Ag,Cu)(In,Ga)Se2 thin films

2017 ◽  
Vol 172 ◽  
pp. 347-352 ◽  
Author(s):  
Sina Soltanmohammad ◽  
Lei Chen ◽  
Brian E. McCandless ◽  
William N. Shafarman
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Metal Precursors

Dependence of pH on phase stability, optical and photoelectrical properties of SnS thin films

2019 ◽  
Vol 128 ◽  
pp. 170-176 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
A. Hmood ◽  
K. Ibrahim ◽  
Naser M. Ahmed ◽  
M. Bououdina
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Photoelectrical Properties ◽  
Sns Thin Films

scholarly journals Phase stability of AlYB14sputtered thin films

2009 ◽  
Vol 21 (35) ◽  
pp. 355006 ◽  
Author(s):  
Helmut Kölpin ◽  
Denis Music ◽  
Graeme Henkelman ◽  
Jens Emmerlich ◽  
Frans Munnik ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Stability

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

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