Raman spectroscopy studies of progressively annealed amorphous Si/Ge superlattices

1991 ◽  
Vol 70 (6) ◽  
pp. 3088-3092 ◽  
Author(s):  
Sunil Kumar ◽  
H. J. Trodahl
2001 ◽  
Vol 667 ◽  
Author(s):  
Vladimir P. Popov ◽  
Ida E. Tyschenko ◽  
Konstantin S. Zhuravlev ◽  
Ivan I. Morosov

ABSTRACTH+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.


2020 ◽  
Vol 20 (10) ◽  
pp. 6604-6609
Author(s):  
Shanshan Liu ◽  
Guochun Zhang ◽  
Kai Feng ◽  
Yanyang Han ◽  
Tao He ◽  
...  

2005 ◽  
Vol 351 (10-11) ◽  
pp. 833-837 ◽  
Author(s):  
N. Jaba ◽  
A. Mermet ◽  
E. Duval ◽  
B. Champagnon

2020 ◽  
Vol 18 (1) ◽  
pp. 9-19
Author(s):  
G.M. Eliseeva ◽  
◽  
I.N. Burmistrov ◽  
D.A. Agarkov ◽  
A.A. Gamova ◽  
...  

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