On the diffusivity‐mobility ratio in small‐gap semiconductors in the presence of a strong magnetic field: Theory and suggestion for experimental determination

1991 ◽  
Vol 70 (8) ◽  
pp. 4309-4316 ◽  
Author(s):  
K. P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Field Theory ◽  
Experimental Determination ◽  
Strong Magnetic Field ◽  
Mobility Ratio

The Diffusivity-Mobilitt Ratio Under Strong Magnetic Field in III-V Superlattices with Graded Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Experimental Method ◽  
Strong Magnetic Field ◽  
Mobility Ratio ◽  
Einstein Relation ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Graded Structures ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the Einstein relation for the diffusivity-mobility ratio in III-V superlattices with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb an example that the diffusivity mobility ratio increases in an oscillatory way with increasing carrier degeneracy as a consequence4SdH effect. The Einstein relation in IIIV superlattice is greater than that of the same for the constituent materials. Besides the theoretical results are in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

The Diffusivtty-Mobility Ratio Under Strong Magnetic Field in Small Gap Superlattices with Graded Structures

1992 ◽  
Vol 262 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Experimental Method ◽  
Strong Magnetic Field ◽  
Mobility Ratio ◽  
Einstein Relation ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Graded Structures ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the Einstein relation for the diffusivity-mobllity ratio (DMR) in small-gap superi at tices (SLS) with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking inAs/ GaSb SL as an example that the DMR increases in an oscillatory way with increasing carrier degeneracy due to SdH effect. The DMR in SL. is greater than that of the constituent materials. The theoretical results are in agreement with the suggested experimental method of determining the DMR in degenerate materials having arbitrary dispersion laws.

Field theory in a strong magnetic field and the quantum Hall effect: Integer Hall effect

1990 ◽  
Vol 42 (16) ◽  
pp. 10610-10640 ◽  
Author(s):  
N. Imai ◽  
K. Ishikawa ◽  
T. Matsuyama ◽  
I. Tanaka
Keyword(s):  
Magnetic Field ◽  
Field Theory ◽  
Hall Effect ◽  
Strong Magnetic Field ◽  
Quantum Hall Effect ◽  
Quantum Hall
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