scholarly journals Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

2010 ◽  
Vol 108 (7) ◽  
pp. 076101 ◽  
Author(s):  
Seunghyup Lee ◽  
Heejin Kim ◽  
Jinjoo Park ◽  
Kijung Yong
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

scholarly journals Bipolar resistive switching characteristics of amorphous SrTiO3 thin films prepared by the sol-gel process

2019 ◽  
Vol 7 (3) ◽  
pp. 298-305 ◽  
Author(s):  
Hui Tang ◽  
Xin-Gui Tang ◽  
Yan-Ping Jiang ◽  
Qiu-Xiang Liu ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Bipolar Resistive Switching ◽  
Sol Gel Process ◽  
Switching Characteristics

Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM

2013 ◽  
Vol 721 ◽  
pp. 194-198 ◽  
Author(s):  
Jun Hua Xi ◽  
Xue Ping Chen ◽  
Hong Xia Li ◽  
Jun Zhang ◽  
Zhen Guo Ji
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Forming Process ◽  
Heavily Doped ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching
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