Erratum: ‘‘Suppression of the emitter size effect on the current gain of AlGaAs/GaAs heterojunction bipolar transistor by utilizing (NH4)2Sx treatment’’ [J. Appl. Phys. 69, 2717 (1991)]

1991 ◽  
Vol 69 (12) ◽  
pp. 8429-8429
Author(s):  
S. Shikata ◽  
H. Okada ◽  
H. Hayashi
Keyword(s):  
Size Effect ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

2000 ◽  
Vol 88 (3) ◽  
pp. 1600-1605 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Noriyuki Watanabe ◽  
Kazuo Watanabe ◽  
Takashi Kobayashi ◽  
Kazumi Wada
Keyword(s):  
Signal Intensity ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain

Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Yumin Zhang ◽  
P. Paul Ruden
Keyword(s):  
Electron Transport ◽  
Hybrid Model ◽  
Carrier Transport ◽  
Effective Field ◽  
Structure Design ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Design Parameters ◽  
Collector Current

ABSTRACTA novel hybrid model and simulation results for an advanced, graded base AlGaN/GaN heterojunction bipolar transistor structure are presented. The base of the n-p-n HBT examined has two parts, a linearly graded AlGaN layer on the emitter side and a heavily p-doped GaN layer on the collector side. In the hybrid model developed here the potential profile is first calculated self-consistently in the biased state taking into account ionized impurity charges, polarization charges, and majority carrier charges. The minority carrier transport is examined subsequently. Injection of electrons from the emitter is modeled as a thermionic emission process. The minority electron transport process in the graded region is drift-dominated due to the large built-in effective field strength. In the low-field GaN layer of the base, electron transport is assumed to be diffusion-dominated. High-level injection effects are modeled in the framework of the Gummel-Poon model. Example structure design parameters are presented and it is found that the calculated current gain can be greater than 25, with a collector current density of 104A/cm2.

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

2008 ◽  
Vol 47-50 ◽  
pp. 383-386
Author(s):  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Wen Shiung Lour ◽  
Chien Ming Li ◽  
Yi Zhen Wu ◽  
...  
Keyword(s):  
Valence Band ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Potential Spike ◽  
Emitter Junction ◽  
Valence Band Discontinuity

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

scholarly journals Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor

2019 ◽  
Vol 13 (3) ◽  
pp. 1345
Author(s):  
Jihane Ouchrif ◽  
Abdennaceur Baghdad ◽  
Aicha Sshel ◽  
Abdelmajid Badri ◽  
Abdelhakim Ballouk
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Communication Systems ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Technological Parameters ◽  
Device Structure ◽  
Optimal Values ◽  
Output Characteristics

<p>Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.</p>

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