Effects of rapid thermal processing on molecular‐beam epitaxy GaAs with SiOxencapsulation

1991 ◽  
Vol 69 (4) ◽  
pp. 2238-2244 ◽  
Author(s):  
Akira Ito ◽  
Akira Usami ◽  
Akio Kitagawa ◽  
Takao Wada ◽  
Yutaka Tokuda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing

Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing

2004 ◽  
Vol 830 ◽  
Author(s):  
A. Nylandsted Larsen ◽  
A. Kanjilal ◽  
J. Lundsgaard Hansen ◽  
P. Gaiduk ◽  
P. Normand ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Process Parameters ◽  
Gate Voltage ◽  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Mos Capacitors ◽  
Very High ◽  
Ge Nanocrystals

ABSTRACTA method of forming a sheet of Ge nanocrystals in a SiO2 layer based on molecular beam epitaxy (MBE) and rapid thermal processing (RTP) is presented. The method takes advantage of the very high precision by which a very thin Ge layer can be deposited by MBE. With proper choice of process parameters the nanocrystal size can be varied between ∼3 and ∼8 nm and the area-density between ∼1×1011 and ∼1×1012 dots/cm2. The tunneling oxide thickness is determined by the thickness of a thermally grown SiO2 layer, and is typically 4 nm. C-V measurements of MOS capacitors reveal hole and electron injection from the substrate into the nanocrystals. Memory windows of about 0.2 and 0.5 V for gate-voltage sweeps of 3 and 6 V, respectively, are achieved.

Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing

2005 ◽  
Vol 81 (2) ◽  
pp. 363-366 ◽  
Author(s):  
A. Kanjilal ◽  
J.L. Hansen ◽  
P. Gaiduk ◽  
A. Nylandsted Larsen ◽  
P. Normand ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Sio2 Layer ◽  
Density Distributions ◽  
Ge Nanocrystals

Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Akio Kitagawa ◽  
Yutaka Tokuda ◽  
Akira Usami ◽  
Takao Wada ◽  
Hiroyuki kano
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Spatial Variations ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTRapid thermal processing (RTP) using halogen lamps for a Si-doped molecular beam epitaxial (MBE) n-GaAs layers was investigated by deep level transient spectroscopy. RTP was performed at 700°C, 800°C and 900°C for 6 s. Two electron traps NI ( Ec-0.5-0.7eV) and EL2 (Ec - 0.82 eV) are produced by RTP at 800 and 900°C.The peculiar spatial variations of the Nl and EL2 concentration across the MBE GaAs films are observed. The larger concentrations of the trap N1 and EL2 are observed near the edge of the samples, and the minima of N1 and EL2 concentration lie between the center and the edge of the sample. It seems that these spatial variations of N1 and EL2 concentration are consistent with that of the thermal stress induced by RTP. Furthermore, the EL2 concentration near the edge of the sample is suppressed by the contact with the GaAs pieces on the edge around the sample during RTP.

Effects of rapid thermal processing on electron traps in molecular‐beam‐epitaxial GaAs

1989 ◽  
Vol 65 (2) ◽  
pp. 606-611 ◽  
Author(s):  
Akio Kitagawa ◽  
Akira Usami ◽  
Takao Wada ◽  
Yutaka Tokuda ◽  
Hiroyuki Kano
Keyword(s):  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Electron Traps ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Heavy Phosphorus Implantation of Ge0.83Si0.17 Epitaxial Layers

1985 ◽  
Vol 45 ◽  
Author(s):  
J.C. Bean ◽  
A.T. Fiory ◽  
L.C. Hopkins
Keyword(s):  
Thermal Processing ◽  
Electrical Transport ◽  
Room Temperature ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Rapid Thermal Processing ◽  
Electrical Activation ◽  
Temperature Dependent ◽  
Secondary Ion

ABSTRACTEpitaxial Ge-Si alloy films were grown on Si(100) by molecular beam epitaxy, subsequently given a shallow P implant, and subjected to rapid thermal processing. Heat treatment causes solid-phase epitaxial regrowth of the amorphized implanted layer similar to the case of pure Ge. Phosphorus redistribution, loss, and trapping at the Ge-Si/Si interface are also observed. Anomalous electrical activation is observed for P concentrations below 1 at.%, where the-carriers are either trapped or compensated at room temperature, but not below 100K. Analyses were carried out by Rutherford backscattering and channeling, secondary ion mass spectrometry, and temperature-dependent electrical transport.

Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Ueda ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
T. Wada ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Activation Energies ◽  
Electron Traps ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTUsing deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 700, 800 and 900 °C for 6s under a SiO2 cap and a capless condition. It is found that during RTP the electron traps with the thermal activation energies of 0.89 and 0.99 eV are produced in Al0.lGa0.9As and Al0.3Ga0.7As, respectively. The thermal activation energies of these traps are close to the reported ones for the trap EL2 in AlxGaM1−xAs. Therefore, these traps are probably related to the trap EL2. In the RTP samples under a capless condition, the concentrations of the trap EL2 in AlxGa1−xAs (x=0.1, 0.3) decreases from the surface to the deeper position in MBE layers, while the depth profile of the trap EL2 in GaAs is flat. It is suggested that the origin of the trap EL2 formation in AlxGa1−xAs is different from one in GaAs.

Effects of Rapid Thermal Processing on Mbe GaAs on Si

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Ito ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
H. Kano ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Surface Region ◽  
The Other ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTVariations of electron traps in molecular-beam-epitaxial (MBE) GaAs layers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was performed at 760 – 910 °C for 9s with Si02 encapsulant. In contrast with the layer on GaAs, the traps AI(Ec – 0.65eV) and A2(Ec – 0.81eV) are observed in the layer on Si. The trap EL2h, one of the EL2 family, is produced by RTP in the layer on Si. Some GaAs surfaces were etched to prove the deeper region. In the surface region, the concentrartion of EL2h is comparable to that of EL2 produced by RTP in the layer on GaAs. On the other hand, in ∿ 1 μm below the surface, the concentration of EL2h is about ten times as large as that of EL2. It is speculated that the stress from the GaAs/Si interface enhances the production of the EL2h concentration. In addition to the EL2, the traps R1(Ec – 0.23 eV), R2(Ec – 0.40 eV), R3(Ec – 0.43eV) and R4(Ec – 0.56 eV) are produced by RTP in the GaAs grown on Si.

Production of the midgap electron trap (EL2) in molecular‐beam‐epitaxial GaAs by rapid thermal processing

1987 ◽  
Vol 61 (3) ◽  
pp. 1215-1217 ◽  
Author(s):  
Akio Kitagawa ◽  
Akira Usami ◽  
Takao Wada ◽  
Yutaka Tokuda ◽  
Hiroyuki Kano
Keyword(s):  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Electron Trap ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Sign in / Sign up

Export Citation Format

Share Document