Electron mobility in InAs1−xSbxand the effect of alloy scattering

1991 ◽  
Vol 69 (6) ◽  
pp. 3571-3577 ◽  
Author(s):  
Vincent W. L. Chin ◽  
R. J. Egan ◽  
T. L. Tansley
Keyword(s):  
Electron Mobility ◽  
Alloy Scattering

Evidence for alloy scattering from pressure-induced changes of electron mobility in In1−xGaxAsyP1−y

1980 ◽  
Vol 16 (14) ◽  
pp. 560 ◽  
Author(s):  
A.R. Adams ◽  
H.L. Tatham ◽  
J.R. Hayes ◽  
A.N. El-Sabbahy ◽  
P.D. Greene
Keyword(s):  
Electron Mobility ◽  
Alloy Scattering ◽  
Induced Changes

HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies

1986 ◽  
Vol 90 ◽  
Author(s):  
M. A. Berding ◽  
A.-B. Chen ◽  
A. Sher
Keyword(s):  
Bond Length ◽  
Band Gap ◽  
Electronic Properties ◽  
Line Width ◽  
Electron Mobility ◽  
Impurity Scattering ◽  
Vacancy Formation ◽  
Alloy Scattering ◽  
Effective Masses ◽  
Formation Energies

ABSTRACTThe alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. We have calculated the electron mobility in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg0.7Cd0.3Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 502-505 ◽  
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Strong Impact ◽  
High Electron ◽  
High Electron Mobility ◽  
Alloy Scattering ◽  
The Impact ◽  
Scanning Electron

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.

Alloy‐scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides

1995 ◽  
Vol 77 (11) ◽  
pp. 6064-6066 ◽  
Author(s):  
V. W. L. Chin ◽  
Bing Zhou ◽  
T. L. Tansley ◽  
Xin Li
Keyword(s):  
Electron Mobility ◽  
Aluminum Nitrides ◽  
Alloy Scattering

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

2018 ◽  
Vol 32 (02) ◽  
pp. 1850002 ◽  
Author(s):  
He Kang ◽  
Hui-Jie Li ◽  
Shao-Yan Yang ◽  
Wei Zhang ◽  
Ming Zhu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Band Offset ◽  
Dimensional Electron ◽  
Alloy Scattering ◽  
Optical Phonon Scattering ◽  
Alloy Disorder ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

The two-dimensional electron gas (2DEG) mobilities limited by alloy disorder (AD) scattering in both Ga- and N-polar AlGaN/GaN heterostructures are investigated. It was found that the AD scattering limited electron mobility in N-polar heterostructures is on the order of 103–104 cm2/Vs, which is comparable to the optical phonon scattering at room-temperature. In comparison, the AD scattering in Ga-polar samples is much less important. Moreover, the electron mobility decreases with the 2DEG density in the Ga-polar device but shows a reverse trend in the N-polar counterpart. This is found to be caused by the rather different electric field distributions in Ga- and N-polar AlGaN/GaN heterostructures. In addition, we find that an AlN interlayer can effectively reduce the alloy scattering, mainly due to the large band offset between AlN and GaN. The calculated mobilities have been compared with the experiment results and good agreements are found. We believe that our results are important for the design of AlGaN/GaN heterostructure-based devices, especially the N-polar ones.

Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

2005 ◽  
Vol 202 (5) ◽  
pp. 837-840 ◽  
Author(s):  
T. Palacios ◽  
L. Shen ◽  
S. Keller ◽  
A. Chakraborty ◽  
S. Heikman ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Alloy Scattering
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