Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

2005 ◽  
Vol 202 (5) ◽  
pp. 837-840 ◽  
Author(s):  
T. Palacios ◽  
L. Shen ◽  
S. Keller ◽  
A. Chakraborty ◽  
S. Heikman ◽  
...  
2013 ◽  
Vol 740-742 ◽  
pp. 502-505 ◽  
Author(s):  
Sebastian Roensch ◽  
Victor Sizov ◽  
Takuma Yagi ◽  
Saad Murad ◽  
Lars Groh ◽  
...  

The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures below 150 K. This effect is linked to a reduction of alloy scattering. Optical and scanning electron microscopy revealed hexagonal shaped defects which also have an effect on the mobility. These defects can be avoided by an appropriate adjustment of the AlN layer thickness.


2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  

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