Influence ofDXcenters and surface states on δ‐doped high‐electron‐mobility transistor performance

1991 ◽  
Vol 69 (7) ◽  
pp. 4123-4128 ◽  
Author(s):  
H. Tian ◽  
K. W. Kim ◽  
M. A. Littlejohn
Keyword(s):  
Electron Mobility ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 970
Author(s):  
Yuan-Ming Chen ◽  
Hsien-Cheng Lin ◽  
Kuan-Wei Lee ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Current Density ◽  
Electron Mobility ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Mos

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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