scholarly journals Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

2010 ◽  
Vol 97 (9) ◽  
pp. 091903 ◽  
Author(s):  
Shumin Wang ◽  
Zonghe Lai ◽  
Mahdad Sadeghi
Keyword(s):  
Quantum Wells ◽  
Optical Quality ◽  
Dilute Nitride

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Characteristics of dilute-nitride GaAsSbN∕InP strained multiple quantum wells

2007 ◽  
Vol 90 (17) ◽  
pp. 171913 ◽  
Author(s):  
D. P. Xu ◽  
J. Y. T. Huang ◽  
J. H. Park ◽  
L. J. Mawst ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Dilute Nitride

Integrated Rib Waveguide-Photodetector Using Si/Si1−xGex Multiple Quantum Wells for Long Wavelenghts

1991 ◽  
Vol 220 ◽  
Author(s):  
V. P. Kesan ◽  
P. G. May ◽  
G. V. Treyz ◽  
E. Bassous ◽  
S. S. Iyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Long Wavelength ◽  
Response Bandwidth ◽  
Soi Substrates

ABSTRACTWe have investigated the structural, electrical, and optical quality of epitaxial Si and Si1−xGex films grown by MBE on SIMOX (Separation by IMplanted OXygen) silicon substrates. Epitaxial films grown on these SOI substrates have been characterized using planar and cross-sectional TEM, high resolution X-ray diffraction, SIMS, and Seeco chemical etching to delineate defects. We have fabricated Si/SiGe P-i-N photodetectors integrated with Si waveguides on SOI for long wavelength applications. Low reverse leakage current densities were seen in these device structures. The photodetector exhibited an internal quantum efficiency of 50% at 1.1 μm with a frequency response bandwidth of 2 GHz.

Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers

2007 ◽  
Vol 90 (23) ◽  
pp. 231119 ◽  
Author(s):  
Hopil P. Bae ◽  
Seth R. Bank ◽  
Homan B. Yuen ◽  
Tomas Sarmiento ◽  
Evan R. Pickett ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dilute Nitride ◽  
Long Wavelength ◽  
Nitride Lasers

On the oscillator strength in dilute nitride quantum wells on GaAs

2012 ◽  
Vol 111 (12) ◽  
pp. 123503 ◽  
Author(s):  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
F. Langer ◽  
S. Höfling ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Oscillator Strength ◽  
Dilute Nitride

A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells

2003 ◽  
Vol 251 (1-4) ◽  
pp. 378-382 ◽  
Author(s):  
C.S. Peng ◽  
W. Li ◽  
T. Jouhti ◽  
E.-M. Pavelescu ◽  
M. Pessa
Keyword(s):  
Quantum Wells ◽  
Dilute Nitride ◽  
And Control
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