Doping- and size-dependent photovoltaic properties of p-type Si-quantum-dot heterojunction solar cells: correlation with photoluminescence

2010 ◽  
Vol 97 (7) ◽  
pp. 072108 ◽  
Author(s):  
Seung Hui Hong ◽  
Jae Hee Park ◽  
Dong Hee Shin ◽  
Chang Oh Kim ◽  
Suk-Ho Choi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Size Dependent ◽  
Si Quantum Dot ◽  
P Type

scholarly journals Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

2010 ◽  
Vol 5 (11) ◽  
pp. 1762-1767 ◽  
Author(s):  
Dawei Di ◽  
Ivan Perez-Wurfl ◽  
Angus Gentle ◽  
Dong-Ho Kim ◽  
Xiaojing Hao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Properties ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

2015 ◽  
Vol 33 (1) ◽  
pp. 38-43 ◽  
Author(s):  
Yunqing Cao ◽  
Zhaoyun Ge ◽  
Xiaofan Jiang ◽  
Jun Xu ◽  
Ling Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Light Harvesting ◽  
Heterojunction Solar Cells ◽  
Si Nanowire ◽  
Si Quantum Dot

Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

2020 ◽  
Vol 697 ◽  
pp. 137825 ◽  
Author(s):  
Toshihiro Miyata ◽  
Hiroki Tokunaga ◽  
Kyosuke Watanabe ◽  
Noriaki Ikenaga ◽  
Tadatsugu Minami
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
P Type

Photovoltaic properties of CdS/phthalocyanine heterojunction cells

1983 ◽  
Vol 61 (5) ◽  
pp. 901-905 ◽  
Author(s):  
A.M. Hor ◽  
R. O. Loutfy
Keyword(s):  
Solar Cells ◽  
Cadmium Sulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optimum Thickness ◽  
Vacuum Deposition ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Photovoltaic Characteristics

Photovoltaic heterojunction solar cells formed between n-type cadmium sulfide, CdS, and various p-type phthaloeyanines (Pc) such as H2Pc, ZnPc, MgPc, CuPc, MnPc, PbPc, and VOPc were investigated. The cells were prepared by electrodepositing thin CdS films onto conducting indium-tin oxide (ITO) followed by sequential vacuum deposition of the phthaloeyanines and gold layers. Among the seven phthaloeyanines studied, ZnPc and MgPc exhibited the highest photovoltaic activity. Some optimization work was done for both the ZnPc and MgPc heterojunction devices. The optimum thickness of CdS and phthaloeyanines was found to be 500 and 850 Å, respectively. Under an illumination of 50 mW cm−2, the photovoltaic characteristics of the ITO/CdS/ZnPc/Au cell were: Voc = 0.54 volts, Jsc = 285 μA cm−2, and η = 0.10%, while the ITO/CdS/MgPc/Au cell delivered Voc = 0.46 volts, Jsc = 231 μA cm−2, and η = 0.066%.

Preparation of B-doped Si quantum dots embedded in SiNx films for Si quantum dot solar cells

2018 ◽  
Vol 32 (02) ◽  
pp. 1850003
Author(s):  
Xiaobo Chen ◽  
Peizhi Yang
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Photovoltaic Performance ◽  
Doping Amount ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
The Matrix ◽  
B Doping

Silicon quantum dots (Si-QDs) embedded B-doped SiN[Formula: see text] films were fabricated by magnetron co-sputtering. The effects of B content on the structural, optical and electrical properties of the films were studied. The study found that the amount of B dopant has no significant effect on the crystallization characteristics of the films. B atoms may be doped in the Si-QDs or exist in the silicon nitride or the interface between Si-QDs and the matrix. PL intensity increases with increasing B content, but increases at first and then decreases. The conductivity as a function of the dopant concentration increases at first from a value of 2.71 × 10[Formula: see text] S/cm to 5.83 × 10[Formula: see text] S/cm until 0.9 at.% and then decreases. By employing B-doped Si-QDs films, Si-QDs/c-Si heterojunction solar cells were fabricated and the effect of B doping concentration on the photovoltaic properties was studied. It was found that, with the increase of B doping amount, the photovoltaic performance is improved, when the B doping amount is 0.9 at.%, the efficiency reaches the highest value of 4.26%.

Ligand-dependent exciton dynamics and photovoltaic properties of PbS quantum dot heterojunction solar cells

2017 ◽  
Vol 19 (9) ◽  
pp. 6358-6367 ◽  
Author(s):  
Jin Chang ◽  
Yuhei Ogomi ◽  
Chao Ding ◽  
Yao Hong Zhang ◽  
Taro Toyoda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Properties ◽  
Exciton Dynamics ◽  
Heterojunction Solar Cells ◽  
Ligand Effects ◽  
Surface Ligand ◽  
Pbs Quantum Dot

Surface ligand effects on the exciton dynamics and photovoltaic properties of PbS QDHSCs were systematically investigated.

High efficiency Si quantum dot heterojunction solar cells using a single SiOX:B layer

2019 ◽  
Vol 30 (32) ◽  
pp. 325404 ◽  
Author(s):  
Tae Gun Kim ◽  
Gyea Young Kwak ◽  
Kyungmin Do ◽  
Kyung Joong Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Heterojunction Solar Cells ◽  
Si Quantum Dot

scholarly journals Size-dependent Photovoltaic Properties of Solar Cells Containing Si Quantum Dots/SiC Multilayers

2020 ◽  
Author(s):  
Yunqing Cao ◽  
Dong Wu ◽  
Ping Zhu ◽  
Zhaoyun Ge ◽  
Wei Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Quantum Confinement Effect ◽  
Solar Spectrum ◽  
Visible Range ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Size Dependent ◽  
Wide Range ◽  
Si Nanostructures

Abstract Recently, many kinds of Si nanostructures have been extensively investigated, in which, Si quantum dot (Si QD) is one of the potential candidates for all-Si tandem solar cells. Because the optical bandgap of Si QDs can be tunable via size controlling, it can match the solar spectrum in a wide range and consequently improve the spectral response. In this work, Si QDs/SiC multilayers with controllable dot sizes were fabricated and characterized. The Raman spectra and transmission electron microscopy (TEM) observation revealed the formation of size-controllable Si QDs. The absorption measurement showed that the bandgap of Si QDs was red shifted to the long wavelength range with the dot size increasing, which agrees well with the quantum confinement effect. Moreover, heterojunction solar cells containing different sized-Si QDs/SiC multilayers were proposed and investigated. The solar cells exhibited strong size-dependent photovoltaic properties and the best cell had the power conversion efficiency (PCE) of 7.27%. Furthermore, the external quantum efficiency (EQE) measurement demonstrated the Si QDs contribution of light absorption and response in ultraviolet-visible range, which provides a promising way to realize better spectral match by applying different sized-Si QDs in the future photovoltaic devices.

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