Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.

1991 ◽  
Vol 69 (1) ◽  
pp. 508-510 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Sadaji Tsuge ◽  
Noboru Nakamura ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
...  
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