Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

2010 ◽  
Vol 97 (6) ◽  
pp. 061903 ◽  
Author(s):  
D. T. Nguyen ◽  
W. Wüster ◽  
Ph. Roussignol ◽  
C. Voisin ◽  
G. Cassabois ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Homogeneous Linewidth

Homogeneous linewidth of confined electron-hole-pair states in II-VI quantum dots

1993 ◽  
Vol 47 (7) ◽  
pp. 3684-3689 ◽  
Author(s):  
U. Woggon ◽  
S. Gaponenko ◽  
W. Langbein ◽  
A. Uhrig ◽  
C. Klingshirn
Keyword(s):  
Quantum Dots ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Homogeneous Linewidth

scholarly journals Photocurrent characterization of intraband transition in GaNVAIN quantum dots

2010 ◽  
Vol 245 ◽  
pp. 012068
Author(s):  
A Vardi ◽  
G Bahir ◽  
S E Schacham ◽  
P K Kandaswamy ◽  
E Monroy
Keyword(s):  
Quantum Dots ◽  
Intraband Transition

scholarly journals Effect of Pressure on Interband and Intraband Transition of Mercury Chalcogenide Quantum Dots

2019 ◽  
Author(s):  
Clément Livache ◽  
Nicolas Goubet ◽  
Charlie Gréboval ◽  
Bertille Martinez ◽  
Julien Ramade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Effect Of Pressure

scholarly journals Exploring Noise-Effect on the Intraband Transition Lifetime of Impurity Doped Quantum Dots

2020 ◽  
Vol 11 (2) ◽  
pp. 8639-8653
Keyword(s):  
Quantum Dots ◽  
Additive Noise ◽  
Gaussian White Noise ◽  
Optoelectronic Devices ◽  
Intraband Transition ◽  
Noise Effect ◽  
Doped Quantum Dots ◽  
Impurity Doped ◽  
Physical Quantities

Current inspection analyzes the role played by Gaussian white noise on intraband transition lifetime (ITL) of quantum dot (QD) containing an impurity. In this regard, the ITL profiles are scrutinized following the variation of several pertinent physical quantities with and without noise. Two different avenues viz. 'additive' and 'multiplicative' have been explored by which noise may be introduced to the system. Often, the presence of noise happens to alter the attributes of the ITL profiles (steady rise, steady fall, and maximization) from that under a noise-free state. And such alterations also prominently depend on the additive/multiplicative nature of noise. The present study clearly manifests the attainment of enhanced ITL of QDs containing dopants under applied Gaussian white additive noise having strength in the neighborhood of a typical value. The findings seem to have important bearings in designing and manufacturing QD-based optoelectronic devices where the role of noise needs to be acknowledged.

Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

2002 ◽  
Vol 80 (15) ◽  
pp. 2770-2772 ◽  
Author(s):  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Self Assembled ◽  
Induced Dipoles
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