scholarly journals Effect of Pressure on Interband and Intraband Transition of Mercury Chalcogenide Quantum Dots

2019 ◽  
Author(s):  
Clément Livache ◽  
Nicolas Goubet ◽  
Charlie Gréboval ◽  
Bertille Martinez ◽  
Julien Ramade ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Effect Of Pressure

scholarly journals Photocurrent characterization of intraband transition in GaNVAIN quantum dots

2010 ◽  
Vol 245 ◽  
pp. 012068
Author(s):  
A Vardi ◽  
G Bahir ◽  
S E Schacham ◽  
P K Kandaswamy ◽  
E Monroy
Keyword(s):  
Quantum Dots ◽  
Intraband Transition

scholarly journals Exploring Noise-Effect on the Intraband Transition Lifetime of Impurity Doped Quantum Dots

2020 ◽  
Vol 11 (2) ◽  
pp. 8639-8653
Keyword(s):  
Quantum Dots ◽  
Additive Noise ◽  
Gaussian White Noise ◽  
Optoelectronic Devices ◽  
Intraband Transition ◽  
Noise Effect ◽  
Doped Quantum Dots ◽  
Impurity Doped ◽  
Physical Quantities

Current inspection analyzes the role played by Gaussian white noise on intraband transition lifetime (ITL) of quantum dot (QD) containing an impurity. In this regard, the ITL profiles are scrutinized following the variation of several pertinent physical quantities with and without noise. Two different avenues viz. 'additive' and 'multiplicative' have been explored by which noise may be introduced to the system. Often, the presence of noise happens to alter the attributes of the ITL profiles (steady rise, steady fall, and maximization) from that under a noise-free state. And such alterations also prominently depend on the additive/multiplicative nature of noise. The present study clearly manifests the attainment of enhanced ITL of QDs containing dopants under applied Gaussian white additive noise having strength in the neighborhood of a typical value. The findings seem to have important bearings in designing and manufacturing QD-based optoelectronic devices where the role of noise needs to be acknowledged.

Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

2002 ◽  
Vol 80 (15) ◽  
pp. 2770-2772 ◽  
Author(s):  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Self Assembled ◽  
Induced Dipoles

scholarly journals Efficiency Study of PbTe/CdTe Core/Shell Quantum Dots Solar Cells

2021 ◽  
Vol 42 (1) ◽  
pp. 97
Author(s):  
Silvio José Prado
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Structural Parameters ◽  
Energy Levels ◽  
Semiconductor Materials ◽  
Intraband Transition ◽  
Intermediate Band ◽  
Transition Energies ◽  
Intermediate Band Solar Cell ◽  
Cdte Core

In this work we theoretically study how to optimize the efficiency of an intermediate band solar cell based on IV-VI PbTe/CdTe semiconductor materials. We focus our attention on how control structural parameters, such as the height and radius in cylindrical quantum dots and the radius in spherical quantum dots to obtain the inter and intraband transition energies that provide the highest efficiency values of the solar cell. The calculation of the energy levels, the selection rules for transitions energies were performed using the 4×4 k.p Kane-Dimmok Hamiltonian.

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

2010 ◽  
Vol 97 (6) ◽  
pp. 061903 ◽  
Author(s):  
D. T. Nguyen ◽  
W. Wüster ◽  
Ph. Roussignol ◽  
C. Voisin ◽  
G. Cassabois ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Intraband Transition ◽  
Homogeneous Linewidth

scholarly journals Intraband transition in self-doped narrow band gap colloidal quantum dots

2017 ◽  
Author(s):  
Bertille Martinez ◽  
Clément Livache ◽  
Adrien Robin ◽  
Herve Cruguel ◽  
Sebastien Royer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Narrow Band ◽  
Colloidal Quantum Dots ◽  
Intraband Transition

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

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