Electrical properties of β‐SiC metal‐oxide‐semiconductor structures

M. I. Chaudhry

doi:10.1063/1.347582

Electrical properties of β‐SiC metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.347582 ◽

1991 ◽

Vol 69 (10) ◽

pp. 7319-7321 ◽

Cited By ~ 16

Author(s):

M. I. Chaudhry

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures

Advances in Electronics and Electron Physics Volume 58 - Advances in Electronics and Electron Physics ◽

10.1016/s0065-2539(08)61021-5 ◽

1982 ◽

pp. 1-79 ◽

Cited By ~ 6

Author(s):

J.N. Churchill ◽

F.E. Holmstrom ◽

T.W. Collins

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Induced Changes

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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Interfacial Electronic Structures of Amorphous Al2O3/ZnO Correlated with Electrical Properties of Al/Al2O3/ZnO Metal-Oxide-Semiconductor Structures

e-Journal of Surface Science and Nanotechnology ◽

10.1380/ejssnt.2012.165 ◽

2012 ◽

Vol 10 (0) ◽

pp. 165-168 ◽

Cited By ~ 7

Author(s):

J. W. Liu ◽

A. Kobayashi ◽

K. Ueno ◽

J. Ohta ◽

H. Fujioka ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Electronic Structures ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

Journal of Applied Physics ◽

10.1063/1.2888537 ◽

2008 ◽

Vol 103 (6) ◽

pp. 064515 ◽

Cited By ~ 4

Author(s):

E. Kapetanakis ◽

P. Normand ◽

P. Holliger

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Low Energy ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Semiconductor Structures

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Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structures

phys stat sol (a) ◽

10.1002/pssa.2210950143 ◽

1986 ◽

Vol 95 (1) ◽

pp. 343-351 ◽

Cited By ~ 1

Author(s):

W. R. Fahrner ◽

C. P. Schneider ◽

E. F. Gorey

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Solid-State Electronics ◽

10.1016/j.sse.2020.107881 ◽

2020 ◽

Vol 172 ◽

pp. 107881 ◽

Cited By ~ 1

Author(s):

Onoriode N. Ogidi-Ekoko ◽

Justin C. Goodrich ◽

Alexandra J. Howzen ◽

Matthew R. Peart ◽

Nicholas C. Strandwitz ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.353270 ◽

1993 ◽

Vol 73 (3) ◽

pp. 1279-1283 ◽

Cited By ~ 33

Author(s):

N. Singh ◽

A. Rys

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Thermal Oxidation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures

Semiconductors ◽

10.1134/s1063782607060164 ◽

2007 ◽

Vol 41 (6) ◽

pp. 699-703

Author(s):

V. N. Mordkovich ◽

A. D. Mokrushin ◽

N. M. Omel’yanovskaya

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Charge Carriers ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Low Field

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Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2 /SiO2 /4H-SiC Metal-Oxide Semiconductor Structures

physica status solidi (a) ◽

10.1002/pssa.201700882 ◽

2018 ◽

Vol 215 (13) ◽

pp. 1700882 ◽

Cited By ~ 3

Author(s):

Krystian Król ◽

Mariusz Sochacki ◽

Andrzej Taube ◽

Norbert Kwietniewski ◽

Sylwia Gierałtowska ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Deposition Temperature ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method

Materials Chemistry and Physics ◽

10.1016/s0254-0584(02)00424-8 ◽

2003 ◽

Vol 78 (3) ◽

pp. 772-777 ◽

Cited By ~ 6

Author(s):

Dei-Wei Chou ◽

Hwei-Heng Wang ◽

Yeong-Her Wang ◽

Mau-Phon Houng

Keyword(s):

Liquid Phase ◽

Electrical Properties ◽

Metal Oxide ◽

Oxide Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Phase Chemical

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