The effect of dopants on the stability of a-Si solar cells

1984 ◽  
Author(s):  
H. Sakai ◽  
A. Asano ◽  
M. Nishiura ◽  
M. Kamiyama ◽  
Y. Uchida ◽  
...  
1989 ◽  
Vol 149 ◽  
Author(s):  
David Redfield ◽  
Richard H. Bube

ABSTRACTBy combining the steady-state and transient behaviors of a recently generalized analysis of the kinetics of metastable defects in good amorphous Si:H, it is shown that no treatment can remove all metastable defects. There is always a significant remnant that is proposed to be the observed built-in defects, which are then not a separate species, distinct from the metastable defects. This remnant is due to vibrational breaking of weak bonds in latent defect centers, and cannot be due to recombination of thermally excited carriers. If the stability can be improved by reducing the number of these latent defect centers, this will also reduce the density of built-in defects that control the initial efficiency. Furthermore, there are good reasons to believe that the source of these defects is extrinsic to a-Si:H, so that improvement in both properties may be achievable.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  

Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Helio Moutinho ◽  
Aziz Shaikh ◽  
...  

2019 ◽  
Author(s):  
Nga Phung ◽  
Hans Köbler ◽  
Diego Di Girolamo ◽  
Thi Tuyen Ngo ◽  
Gabrielle Sousa e Silva ◽  
...  

2019 ◽  
Author(s):  
Marina Vildanova ◽  
Anna Nikolskaia ◽  
Sergey Kozlov ◽  
Oleg Shevaleevskiy

2020 ◽  
Vol 10 (5) ◽  
pp. 1283-1289
Author(s):  
George C. Wilkes ◽  
Ajay D. Upadhyaya ◽  
Ajeet Rohatgi ◽  
Mool C. Gupta

Author(s):  
H. Hashiguchi ◽  
T. Tachibana ◽  
M. Aoki ◽  
T. Kojima ◽  
Y. Ohshita ◽  
...  
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