C and Si codoping method for p-type AlN

2010 ◽  
Vol 108 (5) ◽  
pp. 053715 ◽  
Author(s):  
Honglei Wu ◽  
Ruisheng Zheng ◽  
Wen Liu ◽  
Shu Meng ◽  
Junyi Huang
Keyword(s):  
P Type ◽  
Codoping Method

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

Control of Valence States by a Codoping Method in P-Type GaN Materials

1997 ◽  
Vol 468 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshtoa
Keyword(s):  
Control Method ◽  
Electronic Band Structure ◽  
Ionic Charge ◽  
Electronic Band ◽  
Valence States ◽  
Madelung Energy ◽  
Valence Control ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

ABSTRACTWe propose a new valence control method, the “codoping method (using both n- and p-type dopants at the same time)”, for the fabrication of low-resistivity p-type GaN crystals based on the ab-initio electronic band structure calculations. We have clarified that while doping of acceptor dopants, BeGa and MgGa, leads to destabilization of the ionic charge distributions in p-type GaN crystals, doping of Sica or ON give rise to p-type doped GaN with high doping levels due to a large decrease in the Madelung energy. The codoping of the n- and p-type dopants (the ratio of their concentrations is 1:2) leads to stabilization of the ionic charge distribution inp-type GaN crystals due to a decrease in the Madelung energy, to result in an increase in the net carrier densities.

scholarly journals Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Deng-Feng Li ◽  
Min Luo ◽  
Bo-Lin Li ◽  
Cheng-Bing Wu ◽  
Bo Deng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
First Principles ◽  
Ionization Energy ◽  
Formation Energy ◽  
First Principles Calculations ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type ◽  
Codoping Method

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of singleNScan be lowered by introducing theIIIZn-NS(III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.

Preparation of p-type ZnO films by Al+N-codoping method

2004 ◽  
Vol 265 (1-2) ◽  
pp. 127-132 ◽  
Author(s):  
Zhi-Zhen Ye ◽  
Fei Zhu-Ge ◽  
Jian-Guo Lu ◽  
Zheng-Hai Zhang ◽  
Li-Ping Zhu ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type ◽  
Codoping Method

Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method

1997 ◽  
Vol 36 (Part 2, No. 2B) ◽  
pp. L180-L183 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Hiroshi Katayama-Yoshida
Keyword(s):  
Materials Design ◽  
Low Resistivity ◽  
P Type ◽  
Codoping Method

Electronic Structures of P-Type Doped CuInS2

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshida
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Spherical Wave ◽  
Material Design ◽  
Electronic Band ◽  
Design Considerations ◽  
Band Structure Calculations ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

AbstractWe have studied the electronic structures of CuIn(S0.875X0.125)2 (X=B, C, N, Si or P) based on the ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We have clarified that the physical characteristics of the p-type doped CuInS2 crystals are mainly determined by a change in the strength of interactions between Cu and S atoms. On the basis of the calculated results, we discussed the material design considerations, such as controlling the strength of resistivity for p-type doped CulnS2 materials and converting the conduction type, from n-type to p-type by a codoping method.

Stable p-type ZnO films obtained by lithium-nitrogen codoping method

2013 ◽  
Vol 250 (10) ◽  
pp. 2102-2105 ◽  
Author(s):  
Shen He ◽  
Shan Chong-Xin ◽  
Liu Ji-Shan ◽  
Li Bing-Hui ◽  
Zhang Zhen-Zhong ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type ◽  
Codoping Method

Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L166-L169 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Hiroshi Katayama ◽  
Yoshida
Keyword(s):  
P Type ◽  
Codoping Method

Fabrication of p-Type Zns with Blue-Ag Emission by Triple-Codoping Method

2002 ◽  
Vol 719 ◽  
Author(s):  
S. Kishimoto ◽  
T. Yamamoto ◽  
S. Iida
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Low Resistivity ◽  
Conduction Type ◽  
P Type ◽  
Codoping Method

AbstractWe have succeeded in the fabrication of low-resistivity p-type ZnS with blue -Ag emission by triple-codoping using Ag, a Zn-substituting species, In, a Zn-substituting species, and N, a S-substituting species. For the realization of blue-Ag emission at 436 nm, we use In species as co-activators with Ag activators. For the control of conduction type to obtain p-type ZnS thin films, we introduce N species as acceptors into ZnS codoped with the Ag and In. On the basis of the analysis of the experimental data and calculated results, we proposed a model for ZnS:(Ag, In, and N), in which some of the In species act as coactivators with Ag activators and other In species act as reactive codopants with N acceptors.

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