Stable p-type ZnO films obtained by lithium-nitrogen codoping method

2013 ◽  
Vol 250 (10) ◽  
pp. 2102-2105 ◽  
Author(s):  
Shen He ◽  
Shan Chong-Xin ◽  
Liu Ji-Shan ◽  
Li Bing-Hui ◽  
Zhang Zhen-Zhong ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type ◽  
Codoping Method

Preparation of p-type ZnO films by Al+N-codoping method

2004 ◽  
Vol 265 (1-2) ◽  
pp. 127-132 ◽  
Author(s):  
Zhi-Zhen Ye ◽  
Fei Zhu-Ge ◽  
Jian-Guo Lu ◽  
Zheng-Hai Zhang ◽  
Li-Ping Zhu ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type ◽  
Codoping Method

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

2016 ◽  
Vol 100 ◽  
pp. 468-473 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Zno Films ◽  
Ultrasonic Spray ◽  
P Type

Preparation of p-Type ZnO Films by Doping of Be—N Bonds.

ChemInform ◽  
2003 ◽  
Vol 34 (20) ◽  
Author(s):  
Masahiro Sannmyo ◽  
Yasumasa Tomita ◽  
Kenkichiro Kobayashi
Keyword(s):  
Zno Films ◽  
P Type

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering

2017 ◽  
Vol 51 (5) ◽  
pp. 559-564 ◽  
Author(s):  
M. M. Mezdrogina ◽  
A. Ya. Vinogradov ◽  
V. S. Levitskii ◽  
E. E. Terukova ◽  
Yu. V. Kozhanova ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Zno Films ◽  
Type Conductivity ◽  
P Type

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

p-type ZnO films prepared by alternate deposition of ZnO and Mg3N2 films

2013 ◽  
Vol 74 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Kenkichiro Kobayashi ◽  
Takayori Koyama ◽  
Xinyu Zhang ◽  
Yoshiumi Kohono ◽  
Yasumasa Tomita ◽  
...  
Keyword(s):  
Zno Films ◽  
P Type
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