Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

2010 ◽  
Vol 108 (4) ◽  
pp. 042001 ◽  
Author(s):  
T. L. Burnett ◽  
P. M. Weaver ◽  
J. F. Blackburn ◽  
M. Stewart ◽  
M. G. Cain
Keyword(s):  
Lead Zirconate Titanate ◽  
Electron Backscatter Diffraction ◽  
Piezoresponse Force Microscopy ◽  
Lead Zirconate ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Electron Backscatter ◽  
Nanoscale Characterization ◽  
Backscatter Diffraction

scholarly journals Microtexture Studies of PST and PZT Ceramics and PZT Thin Film by Electron Backscatter Diffraction Patterns

2002 ◽  
Vol 35 (2) ◽  
pp. 71-86 ◽  
Author(s):  
C. W. Tai ◽  
K. Z. Baba-Kishi
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Electron Backscatter Diffraction ◽  
Lead Zirconate ◽  
Ferroelectric Material ◽  
Pzt Ceramics ◽  
Pzt Thin Film ◽  
Electron Backscatter ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

Crystallographic orientations of twelve different lead scandium tantalate (PST) ceramics, two lead zirconate titanate ceramics (PZT) and one PZT thin film were investigated by the technique of electron backscatter diffraction (EBSD) in the scanning electron microscope. The PST ceramics were processed under different conditions of temperature and annealing. Crystal orientations in the bulk ceramics were examined and the results were plotted in microtexture pole- and inverse pole-figures. Local texture and misorientation between adjacent grains in certain selected regions of the ceramics were also examined. To compare the results of the PST with another lead-based ferroelectric material, an unpoled and a poled PZT ceramics were studied for their texture. The electrical and electromechanical properties of the PZT ceramics were also measured in an attempt to correlate texture with properties. Extensive studies revealed insignificant texture in the ceramics, indicating no relationship between ferroelectricity and texture. Preferred orientations were observed in a PZT thin film grown by pulsed-laser deposition (PLD) method. Though improved anisotropy in PZT thin films can be attributed to texture, there is no indication of the dependence of piezoelectricity on texture.

Application of Electron Backscatter Diffraction for Crystallographic Characterization of Tin Whiskers

2012 ◽  
Vol 18 (4) ◽  
pp. 876-884 ◽  
Author(s):  
Joseph R. Michael ◽  
Bonnie B. McKenzie ◽  
Donald F. Susan
Keyword(s):  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Tin Whiskers ◽  
Physical Growth ◽  
Final Choice ◽  
Advantages And Disadvantages ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractUnderstanding the growth of whiskers or high aspect ratio features on substrates can be aided when the crystallography of the feature is known. This study has evaluated three methods that utilize electron backscatter diffraction (EBSD) for the determination of the crystallographic growth direction of an individual whisker. EBSD has traditionally been a technique applied to planar, polished samples, and thus the use of EBSD for out-of-surface features is somewhat more difficult and requires additional steps. One of the methods requires the whiskers to be removed from the substrate resulting in the loss of valuable physical growth relationships between the whisker and the substrate. The other two techniques do not suffer this disadvantage and provide the physical growth information as well as the crystallographic growth directions. The final choice of method depends on the information required. The accuracy and the advantages and disadvantages of each method are discussed.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

Sign in / Sign up

Export Citation Format

Share Document