Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polarized photoluminescence study

1990 ◽  
Vol 68 (1) ◽  
pp. 369-371 ◽  
Author(s):  
H. Shen ◽  
M. Dutta ◽  
D. W. Eckart ◽  
K. A. Jones ◽  
S. M. Vernon ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Uniaxial Stress ◽  
Photoluminescence Study

Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles

1999 ◽  
Vol 46 (6) ◽  
pp. 1603-1607 ◽  
Author(s):  
L. Sellami ◽  
M. Aubin ◽  
C. Aktik ◽  
C. Carlone ◽  
A. Houdayer ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Alpha Particles ◽  
Photoluminescence Study

Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons

1997 ◽  
Vol 44 (6) ◽  
pp. 1856-1861 ◽  
Author(s):  
C. Carlone ◽  
M. Parenteau ◽  
A. Houdayer ◽  
P. Hinrichsen ◽  
J. Vincent
Keyword(s):  
Gallium Arsenide ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
Gallium Vacancy

The influence of high uniaxial stress on the ΓI, C conduction band effective mass of gallium arsenide

1980 ◽  
Vol 34 (5) ◽  
pp. 335-338 ◽  
Author(s):  
J.C. Portal ◽  
R.A. Cooke ◽  
R.A. Stradling ◽  
A.R. Adams ◽  
C.N. Ahmad
Keyword(s):  
Gallium Arsenide ◽  
Effective Mass ◽  
Conduction Band ◽  
Uniaxial Stress
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