Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons

1997 ◽  
Vol 44 (6) ◽  
pp. 1856-1861 ◽  
Author(s):  
C. Carlone ◽  
M. Parenteau ◽  
A. Houdayer ◽  
P. Hinrichsen ◽  
J. Vincent
Keyword(s):  
Gallium Arsenide ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
Gallium Vacancy

scholarly journals Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao
Keyword(s):  
Electrode Materials ◽  
Variable Temperature ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Flow Rates ◽  
Vacancy Defects ◽  
Photoluminescence Study ◽  
P Type ◽  
Quartz Substrates ◽  
Ion Beam Sputter Deposition

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide

1998 ◽  
Author(s):  
Alain J. Houdayer ◽  
Cosmo Carlone ◽  
Kenji Yoshino ◽  
Marcel Aubin ◽  
Sidi Aboujja ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Gallium Vacancy

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

1999 ◽  
Vol 33 (10) ◽  
pp. 1080-1083 ◽  
Author(s):  
A. E. Kunitsyn ◽  
V. V. Chaldyshev ◽  
S. P. Vul’ ◽  
V. V. Preobrazhenskii ◽  
M. A. Putyato ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Gallium Vacancy ◽  
Indium Doping

Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles

1999 ◽  
Vol 46 (6) ◽  
pp. 1603-1607 ◽  
Author(s):  
L. Sellami ◽  
M. Aubin ◽  
C. Aktik ◽  
C. Carlone ◽  
A. Houdayer ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Alpha Particles ◽  
Photoluminescence Study

Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide

1994 ◽  
Vol 50 (3) ◽  
pp. 1557-1566 ◽  
Author(s):  
Anouar Jorio ◽  
Aiguo Wang ◽  
Martin Parenteau ◽  
Cosmo Carlone ◽  
Nelson L. Rowell ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Optical Identification ◽  
Gallium Vacancy
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