Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

2010 ◽  
Vol 108 (4) ◽  
pp. 043702 ◽  
Author(s):  
Guodong Li ◽  
Hong Yin ◽  
Qinsheng Zhu ◽  
Hiroyuki Sakaki ◽  
Chao Jiang
Keyword(s):  
Quantum Dots ◽  
Transport Properties ◽  
Short Range ◽  
Electron Gas ◽  
Type Ii ◽  
Two Dimensional ◽  
Scattering Mechanism ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

Sign in / Sign up

Export Citation Format

Share Document