Insitu, near‐ideal epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy

1990 ◽  
Vol 68 (5) ◽  
pp. 2239-2245 ◽  
Author(s):  
M. Missous ◽  
W. S. Truscott ◽  
K. E. Singer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Barriers

Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy

1986 ◽  
Vol 22 (5) ◽  
pp. 241 ◽  
Author(s):  
M. Missous ◽  
E.H. Rhoderick ◽  
K.E. Singer
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Barriers ◽  
P Type

Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy

1992 ◽  
Vol 61 (19) ◽  
pp. 2332-2334 ◽  
Author(s):  
T. J. Miller ◽  
M. I. Nathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Barriers

Measurements of Al‐AlInAs Schottky barriers preparedinsituby molecular beam epitaxy

1992 ◽  
Vol 60 (9) ◽  
pp. 1099-1101 ◽  
Author(s):  
F. Gueissaz ◽  
M. Gailhanou ◽  
R. Houdré ◽  
M. Ilegems
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Barriers

scholarly journals Влияние морфологии поверхности слоев InAlAs на температурные зависимости параметров диодов Шоттки Au/Ti/n-InAlAs (001)

2019 ◽  
Vol 45 (4) ◽  
pp. 59
Author(s):  
И.Б. Чистохин ◽  
М.С. Аксенов ◽  
Н.А. Валишева ◽  
Д.В. Дмитриев ◽  
И.В. Марчишин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Surface Density ◽  
Molecular Beam ◽  
Schottky Barriers ◽  
Structural Defects ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

AbstractGrowth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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