Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
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1989 ◽
Vol 67
(6)
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pp. 853-864
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1984 ◽
Vol 27
(4)
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pp. 375-380
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1995 ◽
Vol 24
(10)
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pp. 1407-1412
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2015 ◽
Vol 71
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pp. 64-69
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