Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts top‐InAs induced by rapid thermal processing

1990 ◽  
Vol 68 (8) ◽  
pp. 4141-4150 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
W. C. Dautremont‐Smith ◽  
R. A. Logan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing

1990 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
W. C. Dautremont-Smith ◽  
M. Soler ◽  
B. Weir ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Recent Developments

Highly stable W/p‐In0.53Ga0.47As ohmic contacts formed by rapid thermal processing

1989 ◽  
Vol 55 (21) ◽  
pp. 2220-2222 ◽  
Author(s):  
A. Katz ◽  
B. E. Weir ◽  
D. M. Maher ◽  
P. M. Thomas ◽  
M. Soler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Microstructure, Stress and Electrical Properties of the Highly Stable W/P+-In0.53Ga0.47 as Ohmic Contacts

1989 ◽  
Vol 157 ◽  
Author(s):  
A. Katz ◽  
D. Maher ◽  
P.M. Thomas ◽  
B.E. Weir ◽  
W.C. Dautremont-Smith ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Specific Resistance ◽  
Rapid Thermal Processing ◽  
Sputter Deposition ◽  
Deposition Pressure ◽  
Semiconductor Interface ◽  
Excellent Thermal Stability ◽  
Maximum Value

ABSTRACTNon-alloyed refractory ohmic contacts to P+-ln0.53 Ga0.47 As layer have been fabricated using sputtered W and rapid thermal processing. These contacts showed excellent thermal stability over the temperature range of 300 to 750°C, with an abrupt and almost unreacted metal-semiconductor interface. The W film biaxial stresses were found to be strongly depended on the Ar pressure during the sputter deposition. At low Ar pressures the film were deposited with compressive stress, and became tensile at pressures higher than 7mTorr with a maximum value of about 8×l09 dyne cm2 as a result of Ar deposition pressure of 28mTorr. The W contacts to Zn doped 1×1019 cm−3 In0.53GA0.47 As film was found to be ohmic already as deposited with a minimum specific resistance of about 7.5×10−6 Ωcm−2, achieved as a result of heating at 600°C for about 30 sec.

Pt/Ti ohmic contacts to ultrahigh carbon‐dopedp‐GaAs formed by rapid thermal processing

1990 ◽  
Vol 56 (11) ◽  
pp. 1028-1030 ◽  
Author(s):  
A. Katz ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Rapid Thermal Processing of Screen Printed Ohmic Contacts

1997 ◽  
Vol 144 (9) ◽  
pp. 3237-3242 ◽  
Author(s):  
D. Ratakonda ◽  
R. Singh ◽  
L. Vedula ◽  
A. Rohatgi ◽  
J. Mejia ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Screen Printed

Interfacial Microstructure and Carrier Conduction Process in Pt/Ti Ohmic Contact to P-In0.53Ga0.47As Formed by Rapid Thermal Processing

1990 ◽  
Vol 181 ◽  
Author(s):  
S.N.G. Chu ◽  
A. Katz ◽  
T. Boone ◽  
P.M. Thomas ◽  
V.G. Riggs ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Dependence ◽  
Contact Area ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermionic Emission ◽  
Interfacial Microstructure ◽  
Rapid Decrease ◽  
Specific Contact Resistance ◽  
Specific Contact

ABSTRACTThe strong dependence of electrical properties of Pt/Ti ohmic contact to p–In0.53Ga0.47 As (Zn: 5 × 1018 cm−3) on the interfacial microstructure formed by rapid thermal processing (RTP) were intensively studied by transmission electron microscopy, Auger Spectroscopy, and transmission line model (TLM) measurements. The rapid decrease of the specific contact resistance with an increase in RTP temperature was correlated with the development of an interfacial reaction zone. Significant interdiffusion of Ti, In and As across the interface occurred at temperature above, 350°C for a 30 second of RTP. A minimum specific contact resistance (3.4 × 10−6 Ω-cm2) was achieved at RTP temperature of 450°C. The corresponding interfacial microstructure revealed a complicated solid state reaction zone with InAs as one of the major interfacial compounds. The low contact resistance is attributed to the carrier conduction through the InAs regions. This is also consistent with the results of Pt/Ti contact experiments to p-type InAs, InP and GaAs binary surfaces, where the lowest contact resistance was achieved on InAs (3.0 × 10−7 Ω-cm2at Zn: 5 × 1018 cm−3). The temperature dependence of specific contact resistance of as-deposited Pt/Ti contact to InGaAs agrees very well with the thermionic emission dominated carrier transport mechanism with an effective barrier height, φb, of 0.13V. The rapid decrease in the contact resistance as well as its reduced temperature dependence after RTP treatment at elevated temperatures suggesting a partial conversion of thermionic emission dominated contact area to field emission dominated regions. A phenomenological theory of multiple parrallel carrier conduction processes was proposed to analyse the temperature dependence of specific contact resistance for contacts with complicated interfacial microstructure. It was found that, for low resistance contacts, majority of the carriers conducted through only a fraction of the contact area via a tunneling mechanism.

Sign in / Sign up

Export Citation Format

Share Document