Highly stable W/p‐In0.53Ga0.47As ohmic contacts formed by rapid thermal processing

1989 ◽  
Vol 55 (21) ◽  
pp. 2220-2222 ◽  
Author(s):  
A. Katz ◽  
B. E. Weir ◽  
D. M. Maher ◽  
P. M. Thomas ◽  
M. Soler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts top‐InAs induced by rapid thermal processing

1990 ◽  
Vol 68 (8) ◽  
pp. 4141-4150 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
W. C. Dautremont‐Smith ◽  
R. A. Logan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing

1990 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
W. C. Dautremont-Smith ◽  
M. Soler ◽  
B. Weir ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Recent Developments

Microstructure, Stress and Electrical Properties of the Highly Stable W/P+-In0.53Ga0.47 as Ohmic Contacts

1989 ◽  
Vol 157 ◽  
Author(s):  
A. Katz ◽  
D. Maher ◽  
P.M. Thomas ◽  
B.E. Weir ◽  
W.C. Dautremont-Smith ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Specific Resistance ◽  
Rapid Thermal Processing ◽  
Sputter Deposition ◽  
Deposition Pressure ◽  
Semiconductor Interface ◽  
Excellent Thermal Stability ◽  
Maximum Value

ABSTRACTNon-alloyed refractory ohmic contacts to P+-ln0.53 Ga0.47 As layer have been fabricated using sputtered W and rapid thermal processing. These contacts showed excellent thermal stability over the temperature range of 300 to 750°C, with an abrupt and almost unreacted metal-semiconductor interface. The W film biaxial stresses were found to be strongly depended on the Ar pressure during the sputter deposition. At low Ar pressures the film were deposited with compressive stress, and became tensile at pressures higher than 7mTorr with a maximum value of about 8×l09 dyne cm2 as a result of Ar deposition pressure of 28mTorr. The W contacts to Zn doped 1×1019 cm−3 In0.53GA0.47 As film was found to be ohmic already as deposited with a minimum specific resistance of about 7.5×10−6 Ωcm−2, achieved as a result of heating at 600°C for about 30 sec.

Pt/Ti ohmic contacts to ultrahigh carbon‐dopedp‐GaAs formed by rapid thermal processing

1990 ◽  
Vol 56 (11) ◽  
pp. 1028-1030 ◽  
Author(s):  
A. Katz ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Rapid Thermal Processing of Screen Printed Ohmic Contacts

1997 ◽  
Vol 144 (9) ◽  
pp. 3237-3242 ◽  
Author(s):  
D. Ratakonda ◽  
R. Singh ◽  
L. Vedula ◽  
A. Rohatgi ◽  
J. Mejia ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Screen Printed

Pt/Ti/n‐InP nonalloyed ohmic contacts formed by rapid thermal processing

1990 ◽  
Vol 67 (8) ◽  
pp. 3872-3875 ◽  
Author(s):  
A. Katz ◽  
B. E. Weir ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
M. Soler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing

Exploitation of Quantum Photoeffects in Reducing Microscopic Defects and Processing Cycle Time in Advanced Rapid Thermal Processing

1997 ◽  
Vol 470 ◽  
Author(s):  
V. Vedagarbha ◽  
R. Singh ◽  
D. Ratakonda ◽  
L. Vedula ◽  
A. Rohatgi ◽  
...  
Keyword(s):  
Cycle Time ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Rapid Thermal Processing ◽  
Processing Technique ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field ◽  
Low Thermal Budget

ABSTRACTRapid thermal processing is fast emerging as a vital low thermal budget processing technique. Use of photons of wavelengths less than 800 nm in conjunction with infrared and visible photons in RTP resulted in the reduction of microscopic defects and processing time. Screen printed back surface field (BSF) contacts and ohmic contacts which are an integral part of solar cells were processed and Schottky barrier diodes were made. Cycle time was reduced from 172 see's to 108 see's in the case of back surface field contacts and from 162 see's to 122 see's for the ohmic contacts. The Schottky diodes were characterized for electrical data. The structural properties of the metal silicon interface have direct correlation with the electrical properties of the device.

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